SCHEMBL116844

SCHEMBL116844

CCC(C)(C)C(=O)OCCOc1ccccc1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.51
TDP1 Q9NUW8 1/20 0.51
RAB9A P51151 3/20 0.50
NPC1 O15118 2/20 0.50
SMN1; SMN2 Q16637 2/20 0.50
PPARA Q07869 2/20 0.50
TSHR P16473 1/20 0.50
PKM P14618 1/20 0.49
ALDH1A1 P00352 2/20 0.48
KDM4E B2RXH2 1/20 0.48
MEN1 O00255 1/20 0.48
HPGD P15428 1/20 0.48
NFKB1 P19838 1/20 0.48
NFKB2 Q00653 1/20 0.48
KMT2A Q03164 1/20 0.48
RELA Q04206 1/20 0.48
HSD17B10 Q99714 1/20 0.48
MAPT P10636 1/20 0.47
PARP10 Q53GL7 1/20 0.46
RECQL P46063 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12900758 0.95 KDM4E (0.48) THRBTDP1RAB9ANPC1SMN1; SMN2
SCHEMBL11306567 0.95 KDM4E (0.48) THRBTDP1RAB9ANPC1SMN1; SMN2
SCHEMBL18219828 0.95 KDM4E (0.48) THRBTDP1RAB9ANPC1SMN1; SMN2
SCHEMBL12900759 0.95 KDM4E (0.48) THRBTDP1RAB9ANPC1SMN1; SMN2
SCHEMBL12793181 0.91 HDAC1 (0.50) RAB9ANPC1SMN1; SMN2PPARAMAPT
SCHEMBL13683041 0.89 TDP1 (0.44) THRBTDP1RAB9ANPC1SMN1; SMN2
SCHEMBL16376474 0.89 KDM4E (0.60) TDP1RAB9ANPC1SMN1; SMN2ALDH1A1
SCHEMBL10050673 0.89 PPARA (0.61) RAB9ASMN1; SMN2PPARAPKMALDH1A1
SCHEMBL18104416 0.87 PPARA (0.62) PPARAPPARG
SCHEMBL9891462 0.87 PPARA (0.43) THRBTDP1RAB9ANPC1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 82 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240069264-A1 LAMINATE, REFLECTION PREVENTION SYSTEM, AND IMAGE DISPLAY DEVICE FUJIFILM CORPORATION (JP) 2024-02-29 US disclosed
US-11820162-B2 Pretreatment liquid, ink set, base material for image recording, method of producing base material for image recording, image recording material, and image recording method FUJIFILM CORPORATION (JP) 2023-11-21 US disclosed
US-11807023-B2 Pretreatment liquid, ink set, image recorded material, base material for image recording, method of producing base material for image recording, and image recording method FUJIFILM CORPORATION (JP) 2023-11-07 US disclosed
US-11795334-B2 Photo-curable ink composition and method for forming image FUJIFILM CORPORATION (JP) 2023-10-24 US disclosed
US-20230261257-A1 INORGANIC SOLID ELECTROLYTE-CONTAINING COMPOSITION, SHEET FOR ALL-SOLID STATE SECONDARY BATTERY, AND ALL-SOLID STATE SECONDARY BATTERY, AND MANUFACTURING METHODS FOR SHEET FOR ALL-SOLID STATE SECONDARY BATTERY AND ALL-SOLID STATE SECONDARY BATTERY FUJIFILM CORPORATION (JP) 2023-08-17 US disclosed
US-20230212460-A1 COMPOSITION FOR FORMING PHOTO-ALIGNMENT FILM, PHOTO-ALIGNMENT FILM, AND OPTICAL LAMINATE FUJIFILM CORPORATION (JP) 2023-07-06 US disclosed
EP-3604457-B1 AQUEOUS INK COMPOSITION, INK SET, IMAGE FORMING METHOD, AND RESIN MICROPARTICLES FOR INK FUJIFILM CORP (JP) 2022-02-09 EP disclosed
WO-2020244556-A1 METHOD FOR TREATING OR PREVENTING SACCHARIDE-RELATED DISEASES OR DISORDERS 上海交通大学 2020-12-10 WO disclosed
EP-3604457-A1 AQUEOUS INK COMPOSITION, INK SET, IMAGE FORMING METHOD, AND RESIN FINE PARTICLES FOR INKS FUJIFILM Corporation (JP) 2020-02-05 EP disclosed
US-20180162979-A1 PHOTOSENSITIVE COMPOSITION, IMAGE FORMING METHOD, FILM FORMING METHOD, RESIN, IMAGE, AND FILM FUJIFILM CORPORATION (JP) 2018-06-14 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080193878-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-14 US disclosed
US-20080085468-A1 microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate FUJIFILM CORPORATION (JP) 2008-04-10 US disclosed
US-20080081289-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080081292-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-03 US disclosed
US-20080076062-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20080050675-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-02-28 US disclosed
US-20070224539-A1 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2007-09-27 US disclosed
US-20070218406-A1 Acid generator; exposure to actinic radiation FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed
US-20070072121-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed