⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL546451 | 1.00 | — | — | |
| SCHEMBL1478955 | 0.87 | — | — | |
| SCHEMBL14322342 | 0.87 | — | — | |
| SCHEMBL15321972 | 0.87 | — | — | |
| SCHEMBL2766864 | 0.87 | — | — | |
| SCHEMBL17063558 | 0.87 | — | — | |
| SCHEMBL6931147 | 0.82 | — | — | |
| SCHEMBL30549558 | 0.82 | — | — | |
| SCHEMBL7170381 | 0.82 | — | — | |
| SCHEMBL28084 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 359 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122094101-A | Semiconductor device and method for manufacturing the same | — | 2026-05-26 | — | — | CN | claimed |
| US-20250287714-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-11 | — | — | US | claimed |
| US-12402312-B2 | Method of manufacturing semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-08-26 | — | — | US | claimed |
| US-12349493-B2 | Semiconductor structure and manufacturing method of the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-07-01 | — | — | US | claimed |
| US-20230217658-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-07-06 | — | — | US | claimed |
| CN-115985963-A | Semiconductor device having stressed active region supporting enhanced carrier mobility | 三星电子株式会社 | 2023-04-18 | — | — | CN | claimed |
| US-20230017723-A1 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2023-01-19 | — | — | US | claimed |
| US-20190103474-A1 | SIDEWALL ENGINEERING FOR ENHANCED DEVICE PERFORMANCE IN ADVANCED DEVICES | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2019-04-04 | — | — | US | claimed |
| US-9190282-B2 | High-K dielectric layer based semiconductor structures and fabrication process thereof | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2015-11-17 | — | — | US | claimed |
| US-9087836-B2 | Semiconductor device with reduced defects | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2015-07-21 | — | — | US | claimed |
| US-20140117463-A1 | GATE STRUCTURE AND MANUFACTURING METHOD THEREOF | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION (SHANGHAI) (CN) | 2014-05-01 | — | — | US | claimed |
| US-20130313658-A1 | HIGH-K DIELECTRIC LAYER BASED SEMICONDUCTOR STRUCTURES AND FABRICATION PROCESS THEREOF | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. | 2013-11-28 | — | — | US | claimed |
| US-20130234262-A1 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2013-09-12 | — | — | US | claimed |
| US-8021990-B2 | Gate structure and method | TEXAS INSTRUMENTS INCORPORATED (US) | 2011-09-20 | — | — | US | claimed |
| US-20100187588-A1 | SEMICONDUCTOR MEMORY DEVICE INCLUDING A CYLINDER TYPE STORAGE NODE AND A METHOD OF FABRICATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-07-29 | — | — | US | claimed |
| US-7709359-B2 | Integrated circuit with dielectric layer | QIMONDA AG (DE) | 2010-05-04 | — | — | US | claimed |
| US-20090057737-A1 | INTEGRATED CIRCUIT WITH DIELECTRIC LAYER | QIMONDA AG (DE) | 2009-03-05 | — | — | US | claimed |
| US-20060208302-A1 | Non-volatile memory device having charge trap layer and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. | 2006-09-21 | — | — | US | claimed |
| US-20050215062-A1 | Method of manufacturing semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-09-29 | — | — | US | claimed |
| US-6395650-B1 | Methods for forming metal oxide layers with enhanced purity | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-05-28 | — | — | US | claimed |