⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1170537 | 1.00 | — | — | |
| SCHEMBL1478955 | 0.87 | — | — | |
| SCHEMBL14322342 | 0.87 | — | — | |
| SCHEMBL15321972 | 0.87 | — | — | |
| SCHEMBL2766864 | 0.87 | — | — | |
| SCHEMBL17063558 | 0.87 | — | — | |
| SCHEMBL6931147 | 0.82 | — | — | |
| SCHEMBL30549558 | 0.82 | — | — | |
| SCHEMBL7170381 | 0.82 | — | — | |
| SCHEMBL28084 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 863 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118647570-A | Method for manufacturing nano-holes | 澳大利亚国立大学 | 2024-09-13 | — | — | CN | claimed |
| CN-117743927-B | Time sequence signal analysis method based on multi-mode sensing input library network | 北京大学 | 2024-06-21 | — | — | CN | claimed |
| CN-112652630-B | Semiconductor memory device and method of operating the same | 爱思开海力士有限公司 | 2024-06-07 | — | — | CN | claimed |
| CN-117930430-A | Silicon-hafnium dioxide-silicon-based hybrid waveguide and preparation method thereof | 上海交通大学 | 2024-04-26 | — | — | CN | claimed |
| CN-117743927-A | Time sequence signal analysis method based on multi-mode sensing input library network | 北京大学 | 2024-03-22 | — | — | CN | claimed |
| CN-112928116-B | Ferroelectric memory | 财团法人工业技术研究院 | 2024-03-22 | — | — | CN | claimed |
| CN-111463289-B | Field effect transistor and preparation method and application thereof | 国家纳米科学中心 | 2023-09-29 | — | — | CN | claimed |
| CN-114141813-A | Based on Bi2O2Se multi-modal feeling storage and calculation integrated system and implementation method thereof | 北京大学 | 2022-03-04 | — | — | CN | claimed |
| CN-114141812-A | Based on Bi2O2Se ultrahigh-precision temperature-radiant heat sensor and signal decoupling method | 北京大学 | 2022-03-04 | — | — | CN | claimed |
| CN-114093438-A | Based on Bi2O2Se multi-mode library network time sequence information processing method | 北京大学 | 2022-02-25 | — | — | CN | claimed |
| US-20150053966-A1 | METHOD FOR PRODUCING HIGH-PERFORMING AND ELECTRICALLY STABLE SEMI-CONDUCTIVE METAL OXIDE LAYERS, LAYERS PRODUCED ACCORDING TO THE METHOD AND USE THEREOF | EVONIK DEGUSSA GMBH (DE) | 2015-02-26 | — | — | US | claimed |
| CN-104103509-A | Formation method of interfacial layer and formation method of metal gate transistor | SEMICONDUCTOR MFG INT SHANGHAI | 2014-10-15 | — | — | CN | claimed |
| US-8420511-B2 | Transistor and method for forming the same | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2013-04-16 | — | — | US | claimed |
| US-20120168860-A1 | TRANSISTOR AND METHOD FOR FORMING THE SAME | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION (CN) | 2012-07-05 | — | — | US | claimed |
| US-8110469-B2 | Graded dielectric layers | MICRON TECHNOLOGY, INC. (US) | 2012-02-07 | — | — | US | claimed |
| CN-101192011-B | System and method for self aligning etching | SEMICONDUCTOR MFG INT SHANGHAI | 2011-03-23 | — | — | CN | claimed |
| CN-101192011-A | System and method for self aligning etching | SEMICONDUCTOR MFG INT SHANGHAI (CN) | 2008-06-04 | — | — | CN | claimed |
| US-7064382-B2 | Nonvolatile memory and nonvolatile memory manufacturing method | NEC ELECTRONICS CORPORATION (JP) | 2006-06-20 | — | — | US | claimed |
| US-20050199945-A1 | Nonvolatile memory and nonvolatile memory manufacturing method | NEC ELECTRONICS CORPORATION (JP) | 2005-09-15 | — | — | US | claimed |
| CN-1667830-A | Nonvolatile memory and nonvolatile memory manufacturing method | NIPPON ELECTRIC CO (JP) | 2005-09-14 | — | — | CN | claimed |