Iodide

Iodide

SCHEMBL118193

I.[Ge]

nearest known ligand 0.00

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Known targets — ChEMBL curated mechanism

ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG

The experimentally established mechanism targets of Iodide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Iodide SCHEMBL3221552 1.00
Iodide SCHEMBL155241 1.00
Iodide SCHEMBL526 0.71
Iodide SCHEMBL6053672 0.71
Iodide SCHEMBL42205 0.71
SCHEMBL17316 0.71
Iodide SCHEMBL2757576 0.71
Iodide SCHEMBL21886 0.71
Iodide SCHEMBL5037302 0.71
Iodide SCHEMBL498519 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 317 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120844192-B Epsilon-Ga2O3Film, metastable phase gallium oxide ultraviolet detector and preparation method thereof 山东大学 2026-02-27 CN claimed
US-12441667-B2 Method for cultivating functional crops using nano organic germanium and nano organic selenium GANG YOON YOUNG (KR) 2025-10-14 US claimed
CN-119789740-A Perovskite solar cell based on tin-based perovskite thin film and preparation method 西安交通大学 2025-04-08 CN claimed
CN-119789739-A Perovskite solar cell for eliminating perovskite film stress and preparation method thereof 西安交通大学 2025-04-08 CN claimed
CN-119680613-A Atomic-level metal-modified carbon nitride and polar BiOIO3Heterojunction catalyst, preparation method and application thereof 同济大学 2025-03-25 CN claimed
CN-119409695-A Pyridoimidazole nitrogen fused ring compound synthesized based on alkynol and preparation method thereof 遵义医科大学 2025-02-11 CN claimed
CN-119343024-A Method for promoting vertical oriented growth of two-dimensional perovskite film by applying electric field 云南师范大学 2025-01-21 CN claimed
WO-2024151622-A2 APPARATUS AND METHOD FOR FORMATION OF METAL-HALIDE PEROVSKITE FILMS ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY (US) 2024-07-18 WO claimed
CN-114945272-B Functional crop cultivation method using nano organic germanium and nano organic selenium 姜允英 2024-07-16 CN claimed
CN-118270832-A Method for separating metal halide 深圳华算科技有限公司 2024-07-02 CN claimed
US-20100180413-A1 MANUFACTURE METHOD OF WET-TISSUE WITH ANTIMICROBIAL AND ANTI-FUNGUS FUNCTION NANOPOLY CO., LTD. (KR) 2010-07-22 US claimed
WO-2008153239-A1 MANUFACTURE METHOD OF WET-TISSUE WITH ANTIMICROBIAL AND ANTI-FUNGUS FUNCTION NANOPOLY CO., LTD (KR) 2008-12-18 WO claimed
EP-1942534-A2 Method of forming a phase change layer by electro-chemical deposition and manufacturing of a storage node and a phase change memory device using the method Samsung Electronics Co., Ltd. (KR) 2008-07-09 EP claimed
US-20080156651-A1 Method of forming phase change layer, method of manufacturing a storage node using the same, and method of manufacturing phase change memory device using the same SAMSUNG ELECTRONICS CO., LTD. 2008-07-03 US claimed
US-7365028-B2 Methods of forming metal oxide and semimetal oxide MICRON TECHNOLOGY, INC. (US) 2008-04-29 US claimed
US-7226823-B2 Semiconductor device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2007-06-05 US claimed
US-20060024881-A1 Methods of forming metal oxide and semimetal oxide MICRON TECHNOLOGY, INC. 2006-02-02 US claimed
US-20050277233-A1 Semiconductor device and method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2005-12-15 US claimed
US-6939755-B1 Semiconductor device method of manufacturing the same SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2005-09-06 US claimed
US-4910163-A Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system UNIVERSITY OF CONNECTICUT (US) 1990-03-20 US claimed