Iodide

Iodide

SCHEMBL155241

I.I.I.I.[Ge]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHECHRM1CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNG

The experimentally established mechanism targets of Iodide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Iodide SCHEMBL3221552 1.00
Iodide SCHEMBL118193 1.00
Iodide SCHEMBL526 0.71
Iodide SCHEMBL6053672 0.71
Iodide SCHEMBL42205 0.71
SCHEMBL17316 0.71
Iodide SCHEMBL2757576 0.71
Iodide SCHEMBL21886 0.71
Iodide SCHEMBL5037302 0.71
Iodide SCHEMBL498519 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 580 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122039125-A Wood-derived carbon self-supporting transition metal core-shell hydrogen evolution catalyst and preparation method thereof 广西大学 2026-05-15 CN claimed
US-20250069948-A1 DEPOSITION OF METALS IN RECESSED FEATURES WITH THE USE OF HALOGEN-CONTAINING DEPOSITION INHIBITORS LAM RESEARCH CORPORATION (US) 2025-02-27 US claimed
WO-2024222666-A1 POROUS MOLECULAR SIEVE MATERIAL, PREPARATION METHOD, AND APPLICATION THEREOF 中国石油化工股份有限公司 2024-10-31 WO claimed
CN-118833831-A Porous molecular sieve material, preparation method and application thereof 中国石油化工股份有限公司 2024-10-25 CN claimed
EP-4448831-A1 DEPOSITION OF METALS IN RECESSED FEATURES WITH THE USE OF HALOGEN-CONTAINING DEPOSITION INHIBITORS Lam Research Corporation (US) 2024-10-23 EP claimed
CN-118434908-A Metal deposition in recessed features using halogen-containing deposition inhibitors 朗姆研究公司 2024-08-02 CN claimed
CN-112574250-B Preparation method of diethyl germanium dihalide 广东先导微电子科技有限公司 2024-07-19 CN claimed
CN-118270832-A Method for separating metal halide 深圳华算科技有限公司 2024-07-02 CN claimed
CN-118255911-A Preparation method of fluoropolymer with narrow molecular weight distribution 中昊晨光化工研究院有限公司 2024-06-28 CN claimed
WO-2024086584-A1 CARBON-SILICON COMPOSITE STRUCTURES AND METHODS OF FABRICATING THEREOF GRU Energy Lab Inc. (US) 2024-04-25 WO claimed
CN-102099899-A Ion implantation with heavy halogenide compounds VARIAN SEMICONDUCTOR EQUIPMENT 2011-06-15 CN claimed
CN-101960070-A Method for manufacturing wet tissue with antibacterial and antifungal functions NANOPOLY CO LTD 2011-01-26 CN claimed
US-7825201-B2 Process for producing polydienes BRIDGESTONE CORPORATION (JP) 2010-11-02 US claimed
US-20090299019-A1 PROCESS FOR PRODUCING POLYDIENES BRIDGESTONE CORPORATION (JP) 2009-12-03 US claimed
US-20080182954-A1 METHOD FOR PRODUCING FUNCTIONALIZED CIS-1,4-POLYDIENES HAVING HIGH CIS-1,4-LINKAGE CONTENT AND HIGH FUNCTIONALITY BRIDGESTONE CORPORATION (JP) 2008-07-31 US claimed
EP-1939221-A2 A method for producing functionalized cis-1,4polydienes having high cis-1,4-linkage content and high functionality Bridgestone Corporation (JP) 2008-07-02 EP claimed
US-5037775-A Method for selectively depositing single elemental semiconductor material on substrates MCNC (US) 1991-08-06 US claimed
WO-1991003834-A1 METHOD FOR SELECTIVELY DEPOSITING MATERIAL ON SUBSTRATES MCNC (US) 1991-03-21 WO claimed
EP-0051411-B1 SOLID STATE ELECTROLYTES FOR ELECTROCHEMICAL CELLS RAYOVAC Corporation (US) 1985-05-29 EP claimed
EP-0051411-A1 Solid state electrolytes for electrochemical cells RAYOVAC Corporation (US) 1982-05-12 EP claimed