SCHEMBL11922889

SCHEMBL11922889

CCC(C)c1ccc(OCC(=O)Oc2ccc(S(=O)(=O)O)c3cccnc23)cc1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 8/20 0.47
▸ TSHR P16473 2/20 0.46
▸ COMT P21964 2/20 0.43
▸ LMNA P02545 2/20 0.42
▸ GAA P10253 1/20 0.41
▸ HSD17B10 Q99714 2/20 0.41
▸ CYP1A2 P05177 1/20 0.41
▸ ALOX15 P16050 1/20 0.41
▸ HIF1A Q16665 1/20 0.41
▸ HPGD P15428 4/20 0.41
▸ KDM4E B2RXH2 4/20 0.41
▸ KMT2A Q03164 2/20 0.41
▸ MEN1 O00255 1/20 0.41
▸ GLA P06280 1/20 0.41
▸ POLB P06746 3/20 0.40
▸ MAPT P10636 3/20 0.40
▸ TP53 P04637 2/20 0.40
▸ SMN1; SMN2 Q16637 1/20 0.39
▸ CYP3A4 P08684 1/20 0.39
▸ CYP2D6 P10635 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11922942 0.87 ALDH1A1 (0.50) ALDH1A1TSHRGAAHPGDKDM4E
SCHEMBL11922890 0.83 ALDH1A1 (0.50) ALDH1A1TSHRGAACYP1A2KMT2A
SCHEMBL11922950 0.78 ALDH1A1 (0.43) ALDH1A1TSHRGAACYP1A2HIF1A
SCHEMBL14461762 0.77 FFAR1 (0.39) ALDH1A1TSHRGAACYP1A2HPGD
SCHEMBL11922903 0.76 ALDH1A1 (0.49) ALDH1A1TSHRGAAKMT2AMEN1
SCHEMBL11922915 0.75 MEN1 (0.43) ALDH1A1TSHRLMNAKMT2AMEN1
SCHEMBL11922883 0.74 ALDH1A1 (0.58) ALDH1A1TSHRLMNAGAAHIF1A
SCHEMBL14461760 0.73 CYP1A2 (0.40) ALDH1A1TSHRLMNAGAACYP1A2
SCHEMBL11922884 0.73 ALDH1A1 (0.49) ALDH1A1TSHRGAACYP1A2KMT2A
Actinoquinol SCHEMBL555260 0.73 ALDH1A1 (0.62) ALDH1A1TSHRCOMTLMNAGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 — — US disclosed
US-20160018734-A1 PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-21 — — US disclosed
US-9235120-B2 Negative actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blanks, resist pattern forming method, and photomask FUJIFILM CORPORATION (JP) 2016-01-12 — — US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 — — US disclosed
US-9091927-B2 Positive resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2015-07-28 — — US disclosed
US-20140178806-A1 NEGATIVE ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, AND PHOTOMASK FUJIFILM CORPORATION (JP) 2014-06-26 — — US disclosed
US-8673538-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-03-18 — — US disclosed
US-20140072905-A1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-03-13 — — US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 — — US disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 — — US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 — — US disclosed
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