SCHEMBL11922917

SCHEMBL11922917

CCC(C)c1ccc(OC(=O)CCCOc2cccc3c(S(=O)(=O)O)cccc23)cc1

nearest known ligand 0.41

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ CASP1 P29466 2/20 0.41
▸ KMT2A Q03164 2/20 0.39
▸ MEN1 O00255 1/20 0.39
▸ TDP1 Q9NUW8 1/20 0.39
▸ ALDH1A1 P00352 1/20 0.39
▸ TSHR P16473 1/20 0.39
▸ CYP1A2 P05177 1/20 0.38
▸ CNR2 P34972 3/20 0.36
▸ CNR1 P21554 2/20 0.36
▸ ESR1 P03372 1/20 0.35
▸ HIF1A Q16665 1/20 0.35
▸ SLC2A1 P11166 1/20 0.34
▸ NPC1 O15118 1/20 0.33
▸ RAB9A P51151 1/20 0.33
▸ HTR6 P50406 1/20 0.33
▸ FABP3 P05413 1/20 0.33
▸ FABP4 P15090 1/20 0.33
▸ LMNA P02545 1/20 0.33
▸ SMN1; SMN2 Q16637 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11922950 0.89 ALDH1A1 (0.43) CASP1KMT2AMEN1TDP1ALDH1A1
SCHEMBL11922915 0.84 MEN1 (0.43) CASP1KMT2AMEN1TDP1ALDH1A1
SCHEMBL11922890 0.83 ALDH1A1 (0.50) CASP1KMT2AMEN1TDP1ALDH1A1
SCHEMBL15834039 0.80 CYP1A2 (0.39) CASP1TDP1ALDH1A1TSHRCYP1A2
SCHEMBL11922942 0.77 ALDH1A1 (0.50) CASP1KMT2AMEN1TDP1ALDH1A1
SCHEMBL14461760 0.76 CYP1A2 (0.40) CASP1KMT2AMEN1TDP1ALDH1A1
SCHEMBL17424270 0.74 ALDH1A1 (0.45) CASP1KMT2AMEN1TDP1ALDH1A1
SCHEMBL14461745 0.73 ALDH1A1 (0.40) CASP1KMT2AMEN1TDP1ALDH1A1
SCHEMBL11922920 0.73 TDP1 (0.48) KMT2AMEN1TDP1ALDH1A1TSHR
SCHEMBL11961051 0.72 ALDH1A1 (0.53) KMT2AMEN1TDP1ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 — — US disclosed
US-20160018734-A1 PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, AND METHOD FOR PRODUCING ELECTRONIC DEVICE USING THEM, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-21 — — US disclosed
US-9235120-B2 Negative actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blanks, resist pattern forming method, and photomask FUJIFILM CORPORATION (JP) 2016-01-12 — — US disclosed
US-9235120-B2 Negative actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, resist-coated mask blanks, resist pattern forming method, and photomask FUJIFILM CORPORATION (JP) 2016-01-12 — — US disclosed
US-20150293446-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-15 — — US disclosed
US-9091927-B2 Positive resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition FUJIFILM CORPORATION (JP) 2015-07-28 — — US disclosed
US-20140178806-A1 NEGATIVE ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, AND PHOTOMASK FUJIFILM CORPORATION (JP) 2014-06-26 — — US disclosed
US-20140178806-A1 NEGATIVE ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, AND PHOTOMASK FUJIFILM CORPORATION (JP) 2014-06-26 — — US disclosed
US-8673538-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-03-18 — — US disclosed
US-20140072905-A1 POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2014-03-13 — — US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 — — US disclosed
US-20130029255-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-31 — — US disclosed
US-20130004888-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed
US-20120202141-A1 CHEMICAL AMPLIFICATION TYPE POSITIVE RESIST COMPOSITION, AND RESIST FILM, RESIST COATED MASK BLANKS AND RESIST PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-09 — — US disclosed
Send feedback