⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29064929 | 0.87 | — | — | |
| SCHEMBL61893 | 0.87 | — | — | |
| SCHEMBL29260479 | 0.87 | — | — | |
| SCHEMBL1205574 | 0.75 | — | — | |
| Hydrogen Sulfide SCHEMBL20972404 | 0.75 | — | — | |
| SCHEMBL1204244 | 0.75 | — | — | |
| Arsenic SCHEMBL21773555 | 0.75 | — | — | |
| SCHEMBL21380712 | 0.75 | — | — | |
| SCHEMBL1206081 | 0.75 | — | — | |
| SCHEMBL6092952 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11696520-B2 | Semiconductor device having three-dimensional cell structure | SK Hynix Inc. (KR) | 2023-07-04 | — | — | US | claimed |
| US-20220140238-A1 | SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME | SK Hynix Inc. | 2022-05-05 | — | — | US | claimed |
| CN-114429969-A | Semiconductor device having three-dimensional cell structure and method of manufacturing the same | 爱思开海力士有限公司 | 2022-05-03 | — | — | CN | claimed |
| US-10608175-B2 | Resistance change device having electrode disposed between resistance switching layer and ferroelectric layer | SK Hynix Inc. (KR) | 2020-03-31 | — | — | US | claimed |
| US-20190181336-A1 | RESISTANCE CHANGE DEVICE | SK Hynix Inc. (KR) | 2019-06-13 | — | — | US | claimed |
| US-7897953-B2 | Multi-level programmable PCRAM memory | MICRON TECHNOLOGY, INC. (US) | 2011-03-01 | — | — | US | claimed |
| US-20090180314-A1 | MULTI-LEVEL PROGRAMMABLE PCRAM MEMORY | MICRON TECHNOLGY, INC. | 2009-07-16 | — | — | US | claimed |
| US-12471509-B2 | Method of manufacturing a semiconductor device having three-dimensional cell structure | SK Hynix Inc. (KR) | 2025-11-11 | — | — | US | disclosed |
| US-12396379-B2 | Semiconductor devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-08-19 | — | — | US | disclosed |
| CN-110176471-B | Cross-point array device and method of manufacturing the same | 爱思开海力士有限公司 | 2023-10-03 | — | — | CN | disclosed |
| US-20230292638-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL CELL STRUCTURE | SK Hynix Inc. (KR) | 2023-09-14 | — | — | US | disclosed |
| CN-109786548-B | Cross-point array device and method of manufacturing the same | 爱思开海力士有限公司 | 2023-07-18 | — | — | CN | disclosed |
| US-11696520-B2 | Semiconductor device having three-dimensional cell structure | SK Hynix Inc. (KR) | 2023-07-04 | — | — | US | disclosed |
| WO-2009114177-A2 | PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE | MICRON TECHNOLOGY, INC. (US) | 2009-09-17 | — | — | WO | disclosed |
| WO-2009114162-A1 | NON-VOLATILE MEMORY WITH RESISTIVE ACCESS COMPONENT | MICRON TECHNOLOGY, INC. (US) | 2009-09-17 | — | — | WO | disclosed |
| US-20090231910-A1 | NON-VOLATILE MEMORY WITH RESISTIVE ACCESS COMPONENT | MICRON TECHNOLOGY, INC. | 2009-09-17 | — | — | US | disclosed |
| WO-2009114200-A1 | PHASE CHANGE MEMORY ADAPTIVE PROGRAMMING | MICRON TECHNOLOGY, INC. (US) | 2009-09-17 | — | — | WO | disclosed |
| US-20090231911-A1 | PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE | MICRON TECHNOLOGY, INC. | 2009-09-17 | — | — | US | disclosed |
| US-20090231912-A1 | PHASE CHANGE MEMORY ADAPTIVE PROGRAMMING | MICRON TECHNOLOGY, INC. | 2009-09-17 | — | — | US | disclosed |
| US-20090180314-A1 | MULTI-LEVEL PROGRAMMABLE PCRAM MEMORY | MICRON TECHNOLGY, INC. | 2009-07-16 | — | — | US | disclosed |