SCHEMBL12157342

SCHEMBL12157342

CCC(C)C(=O)OC12CC3CC(CC(COC(=O)C(F)(F)S(=O)(=O)O)(C3)C1)C2

nearest known ligand 0.36

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
SCN9A Q15858 3/20 0.33
ALDH1A1 P00352 1/20 0.33
MEN1 O00255 1/20 0.32
KMT2A Q03164 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14294716 0.88 SCN9A (0.39) SCN9AALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL10225066 0.86 SCN9A (0.35) SCN9AALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL13467028 0.85 SCN9A (0.43) SCN9AALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL12157324 0.84 SCN9A (0.35) SCN9AALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL13848264 0.83 SCN9A (0.43) SCN9AALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL17409270 0.83 DPP8 (0.31)
SCHEMBL1635598 0.82 SCN9A (0.34) SCN9AALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL14294661 0.82 ALDH1A1 (0.37) SCN9AALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL12040120 0.81 SCN9A (0.33) SCN9A
SCHEMBL686263 0.81 SCN9A (0.33) SCN9AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9182670-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 US disclosed
US-20140329183-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-11-06 US disclosed
US-8815491-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-26 US disclosed
US-8288076-B2 Chemically amplified resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-16 US disclosed
US-8048610-B2 Sulfonium salt-containing polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-11-01 US disclosed
US-20100304302-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed
US-20090269696-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-10-29 US disclosed