⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1226137 | 1.00 | — | — | |
| SCHEMBL400344 | 1.00 | — | — | |
| SCHEMBL400244 | 1.00 | — | — | |
| SCHEMBL12272287 | 1.00 | — | — | |
| Hydrochloric Acid SCHEMBL27779801 | 0.95 | — | — | |
| SCHEMBL28295899 | 0.95 | — | — | |
| SCHEMBL27576289 | 0.95 | — | — | |
| SCHEMBL28218386 | 0.95 | — | — | |
| SCHEMBL31243568 | 0.95 | — | — | |
| SCHEMBL27949066 | 0.95 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9343293-B2 | Flowable silicon—carbon—oxygen layers for semiconductor processing | APPLIED MATERIALS, INC. (US) | 2016-05-17 | — | — | US | claimed |
| US-20140302688-A1 | FLOWABLE SILICON-CARBON-OXYGEN LAYERS FOR SEMICONDUCTOR PROCESSING | APPLIED MATERIALS, INC. (US) | 2014-10-09 | — | — | US | claimed |
| US-20130217239-A1 | FLOWABLE SILICON-AND-CARBON-CONTAINING LAYERS FOR SEMICONDUCTOR PROCESSING | APPLIED MATERIALS, INC. (US) | 2013-08-22 | — | — | US | claimed |
| US-20130217240-A1 | FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING | APPLIED MATERIALS, INC. (US) | 2013-08-22 | — | — | US | claimed |
| WO-2013036667-A2 | FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING | APPLIED MATERIALS, INC. (US) | 2013-03-14 | — | — | WO | claimed |
| US-9343293-B2 | Flowable silicon—carbon—oxygen layers for semiconductor processing | APPLIED MATERIALS, INC. (US) | 2016-05-17 | — | — | US | disclosed |
| US-20150140833-A1 | METHOD OF DEPOSITING A LOW-TEMPERATURE, NO-DAMAGE HDP SIC-LIKE FILM WITH HIGH WET ETCH RESISTANCE | APPLIED MATERIALS, INC. | 2015-05-21 | — | — | US | disclosed |
| US-20140302688-A1 | FLOWABLE SILICON-CARBON-OXYGEN LAYERS FOR SEMICONDUCTOR PROCESSING | APPLIED MATERIALS, INC. (US) | 2014-10-09 | — | — | US | disclosed |
| US-20130217241-A1 | TREATMENTS FOR DECREASING ETCH RATES AFTER FLOWABLE DEPOSITION OF SILICON-CARBON-AND-NITROGEN-CONTAINING LAYERS | APPLIED MATERIALS, INC. (US) | 2013-08-22 | — | — | US | disclosed |
| US-20130217239-A1 | FLOWABLE SILICON-AND-CARBON-CONTAINING LAYERS FOR SEMICONDUCTOR PROCESSING | APPLIED MATERIALS, INC. (US) | 2013-08-22 | — | — | US | disclosed |
| US-20130217243-A1 | DOPING OF DIELECTRIC LAYERS | APPLIED MATERIALS, INC. (US) | 2013-08-22 | — | — | US | disclosed |
| US-20130217240-A1 | FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING | APPLIED MATERIALS, INC. (US) | 2013-08-22 | — | — | US | disclosed |
| EP-1836238-A1 | FUNCTIONALIZED POLYMERS AND IMPROVED TIRES THEREFROM | Bridgestone Corporation (JP) | 2007-09-26 | — | — | EP | disclosed |
| US-20070164261-A1 | Liquid for immersion exposure and immersion exposure method | JSR CORPORATION (JP) | 2007-07-19 | — | — | US | disclosed |
| EP-1748469-A1 | LIQUID FOR IMMERSION EXPOSURE AND IMMERSION EXPOSURE METHOD | JSR Corporation (JP) | 2007-01-31 | — | — | EP | disclosed |
| US-20060173138-A1 | particularly tire treads exhibiting reduced rolling resistance; include a primary or secondary amine group and a silicon-containing or tin-containing group at or near at least one end of a polymer chain | BRIDGESTONE CORPORATION (JP) | 2006-08-03 | — | — | US | disclosed |
| WO-2006076629-A1 | FUNCTIONALIZED POLYMERS AND IMPROVED TIRES THEREFROM | BRIDGESTONE CORPORATION (JP) | 2006-07-20 | — | — | WO | disclosed |
| EP-0459499-B1 | Process for preparing silacycloalkanes | DOW CORNING (US) | 1999-05-26 | — | — | EP | disclosed |
| EP-0459499-A1 | Process for preparing silacycloalkanes | DOW CORNING CORPORATION (US) | 1991-12-04 | — | — | EP | disclosed |
| US-4973723-A | REACTING HALOSILACYCLOALKANE WIT ALKYLALUMINUM HALIDE | DOW CORNING CORPORATION (US) | 1990-11-27 | — | — | US | disclosed |