SCHEMBL12376691

SCHEMBL12376691

C=C(C)C(=O)OC1CCC(C(=O)Oc2ccc([S+](c3ccccc3)c3ccccc3)cc2)CC1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 3/20 0.48
POLB P06746 2/20 0.42
KMT2A Q03164 3/20 0.42
HTT P42858 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
L3MBTL1 Q9Y468 2/20 0.39
PDGFRB P09619 2/20 0.37
PDGFRA P16234 2/20 0.37
MEN1 O00255 1/20 0.36
RAB9A P51151 1/20 0.36
F2 P00734 1/20 0.36
TSHR P16473 2/20 0.35
USP2 O75604 1/20 0.35
TP53 P04637 1/20 0.35
ATM Q13315 1/20 0.34
HPGD P15428 1/20 0.34
MAP2K1 Q02750 1/20 0.34
FABP7 O15540 1/20 0.34
FABP5 Q01469 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12603632 0.79 ELANE (0.64) ELANEPOLBKMT2AHTTSMN1; SMN2
SCHEMBL10170649 0.78 ELANE (0.67) ELANEPOLBKMT2AHTTSMN1; SMN2
SCHEMBL92378 0.77 ELANE (0.66) ELANEPOLBKMT2AHTTSMN1; SMN2
SCHEMBL24196288 0.77 ELANE (0.43) ELANEPOLBKMT2AHTTSMN1; SMN2
SCHEMBL19431469 0.76 KMT2A (0.50) ELANEPOLBKMT2AHTTSMN1; SMN2
SCHEMBL13963884 0.75 ALDH1A1 (0.43) POLBKMT2AHTTSMN1; SMN2TDP1
SCHEMBL12220345 0.75 HTT (0.49) ELANEPOLBKMT2AHTTSMN1; SMN2
SCHEMBL12220348 0.74 ELANE (0.54) ELANEPOLBKMT2AHTTSMN1; SMN2
SCHEMBL9186604 0.73 ELANE (0.52) ELANEPOLBKMT2ASMN1; SMN2TDP1
SCHEMBL24595910 0.73 ELANE (0.53) ELANEPOLBKMT2AHTTSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170205709-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-20 US disclosed
US-20170205709-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-20 US disclosed
US-20170184964-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184962-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184962-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184963-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20170184963-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-06-29 US disclosed
US-20140377706-A1 DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-25 US disclosed
US-20140370441-A1 DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-18 US disclosed
US-8911929-B2 Developer and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-16 US disclosed
US-20140315131-A1 DEVELOPER AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-23 US disclosed
US-20140178818-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-26 US disclosed
US-20140141377-A1 DEVELOPER AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-05-22 US disclosed
US-8691490-B2 Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-04-08 US disclosed
US-20140080055-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 US disclosed
US-20140080064-A1 RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-03-20 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS RPS4Y1, ETV6, RPS4X ELANE 288/4885POLB 1380/4885KMT2A 1677/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.