⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27755684 | 0.81 | — | — | |
| SCHEMBL1720370 | 0.79 | — | — | |
| SCHEMBL15623809 | 0.78 | — | — | |
| SCHEMBL14724352 | 0.73 | — | — | |
| SCHEMBL562717 | 0.72 | PRMT3 (0.59) | — | |
| SCHEMBL25510145 | 0.69 | PRMT3 (0.62) | — | |
| SCHEMBL9789801 | 0.69 | — | — | |
| SCHEMBL14192212 | 0.69 | PRMT3 (0.56) | — | |
| SCHEMBL1697723 | 0.69 | PRMT1 (0.65) | — | |
| SCHEMBL48539 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | claimed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | claimed |
| US-20090084406-A1 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. | 2009-04-02 | — | — | US | claimed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | claimed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | claimed |
| US-20130338363-A1 | SILANE COMPOUND, PRODUCTION METHOD THEREOF, AND RESIN COMPOSITION CONTAINING SILANE COMPOUND | NIPPON SHOKUBAI CO., LTD. (JP) | 2013-12-19 | — | — | US | disclosed |
| US-8541532-B2 | Silane compound, production method thereof, and resin composition containing silane compound | NIPPON SHOKUBAI CO., LTD. (JP) | 2013-09-24 | — | — | US | disclosed |
| US-8163095-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-04-24 | — | — | US | disclosed |
| EP-2143820-B1 | An electroless gold plating solution | ROHM & HAAS ELECT MAT (US) | 2012-03-07 | — | — | EP | disclosed |
| EP-1031884-B1 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL CO (JP) | 2012-01-11 | — | — | EP | disclosed |
| US-20110206829-A1 | COMPOSITION FOR STRIPPING AND STRIPPING METHOD | SAMSUNG DISPLAY CO., LTD. (KR) | 2011-08-25 | — | — | US | disclosed |
| US-7968507-B2 | Composition for stripping and stripping method | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-06-28 | — | — | US | disclosed |
| US-7078371-B2 | For cleaning a substrate of semiconductor integrated circuits or liquid crystal display devices | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-07-18 | — | — | US | disclosed |
| WO-2006038735-A1 | RESIN COMPOSITION FOR OPTICAL PACKAGING MATERIAL AND PROCESS FOR PREPARING THE SAME, AND OPTICAL PACKAGING MATERIAL, OPTICAL PACKAGING COMPONENT, AND OPTICAL MODULE | NIPPON SHOKUBAI CO., LTD. (JP) | 2006-04-13 | — | — | WO | disclosed |
| EP-1507829-A1 | FIRE RETARDANT RESIN COMPOSITION, METHOD OF ITS PRODUCTION, SHAPED ARTICLES COMPRISING THE SAME, AND SILICA | Nippon Shokubai Co., Ltd. (JP) | 2005-02-23 | — | — | EP | disclosed |
| US-20040048761-A1 | Cleaning composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-03-11 | — | — | US | disclosed |
| WO-2003099934-A1 | FIRE RETARDANT RESIN COMPOSITION, METHOD OF ITS PRODUCTION, SHAPED ARTICLES COMPRISING THE SAME, AND SILICA | NIPPON SHOKUBAI CO., LTD. (JP) | 2003-12-04 | — | — | WO | disclosed |
| US-6638694-B2 | Mixtures of amines, water soluble solvents and corrosion resistance agents, used for removing photoresist films and residues after etching semiconductor integrated circuits or liquid crystal displays | MITSUBISHI GAS CHEMICAL COMPANY, INC (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030186175-A1 | RESIST STRIPPING AGENT AND PROCESS OF PRODUCING SEMICONDUCTOR DEVICES USING THE SAME | IKEMOTO KAZUTO (JP) | 2003-10-02 | — | — | US | disclosed |
| EP-1031884-A2 | Resist stripping agent and process of producing semiconductor devices using the same | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2000-08-30 | — | — | EP | disclosed |