SCHEMBL12405686

SCHEMBL12405686

CCC(C)(C)C(=O)OCC(=O)OC1COC(=O)C1

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTPN1 P18031 1/20 0.33
FKBP1A P62942 2/20 0.32
RIPK1 Q13546 1/20 0.31
CYP3A4 P08684 3/20 0.30
HMGCR P04035 3/20 0.30
USP2 O75604 2/20 0.30
ALDH1A1 P00352 2/20 0.30
TSHR P16473 2/20 0.30
KDM4E B2RXH2 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
NR1I2 O75469 1/20 0.30
ABCB11 O95342 1/20 0.30
NR3C1 P04150 1/20 0.30
PGR P06401 1/20 0.30
ABCB1 P08183 1/20 0.30
ADORA3 P0DMS8 1/20 0.30
CYP2C8 P10632 1/20 0.30
CHRM1 P11229 1/20 0.30
ADRB3 P13945 1/20 0.30
GABRA1 P14867 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25701305 0.97 PTPN1 (0.32) PTPN1FKBP1A
SCHEMBL25701296 0.89 PTPN1 (0.30) PTPN1
SCHEMBL25701298 0.87 PTPN1 (0.32) PTPN1FKBP1AHMGCR
SCHEMBL47476 0.86 PTPN1 (0.37) PTPN1FKBP1ARIPK1CYP3A4HMGCR
SCHEMBL17245081 0.86 PTPN1 (0.37) PTPN1FKBP1ARIPK1CYP3A4HMGCR
SCHEMBL23474771 0.82
SCHEMBL17404438 0.81 PTPN1 (0.34) PTPN1FKBP1ARIPK1CYP3A4HMGCR
SCHEMBL16784766 0.78 APOBEC3A (0.37) FKBP1AHMGCRALDH1A1KDM4ESMN1; SMN2
SCHEMBL18401042 0.78 PTPN1 (0.32) PTPN1
SCHEMBL12973905 0.77 PTPN1 (0.37) PTPN1FKBP1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230205084-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-29 US disclosed
US-20230205084-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2023-06-29 US disclosed
US-20230137472-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-20160004157-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-07 US disclosed
US-20160004157-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-07 US disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
WO-2014142360-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-09-18 WO disclosed
US-7985528-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-26 US disclosed
US-20100129738-A1 POSITIVE RESIST COMPOSITION AND PATTERING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-05-27 US disclosed
US-20100062374-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-20100062366-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-20100062373-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-7622242-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-11-24 US disclosed
US-20090081588-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-26 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100062373-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS RER1, ASH2L, PHF2 PTPN1 1021/4885FKBP1A 4119/4885RIPK1 1087/4885
US-20100062374-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS RER1, ARCN1, ASH2L PTPN1 657/4885FKBP1A 3679/4885RIPK1 1821/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.