⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1241039 | 1.00 | — | — | |
| SCHEMBL31500684 | 0.82 | — | — | |
| SCHEMBL6742037 | 0.82 | — | — | |
| SCHEMBL28854081 | 0.82 | — | — | |
| SCHEMBL11125027 | 0.82 | — | — | |
| SCHEMBL38650538 | 0.82 | — | — | |
| SCHEMBL6742032 | 0.82 | — | — | |
| SCHEMBL4727015 | 0.82 | — | — | |
| SCHEMBL7613809 | 0.82 | — | — | |
| SCHEMBL30739160 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 150 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118712263-A | Seed layer of solar cell metal electrode and preparation method and application thereof | 浙江晶盛机电股份有限公司 | 2024-09-27 | — | — | CN | claimed |
| CN-116825876-A | Schottky junction enhanced body defect absorption near infrared detector and preparation method thereof | 复旦大学 | 2023-09-29 | — | — | CN | claimed |
| CN-116008357-A | High-sensitivity gas sensor based on molecular self-assembly and preparation method thereof | 复旦大学 | 2023-04-25 | — | — | CN | claimed |
| CN-113517372-A | Photovoltaic black silicon Schottky junction infrared detector at room temperature and preparation method thereof | 复旦大学 | 2021-10-19 | — | — | CN | claimed |
| CN-112473575-A | CeO (CeO)2-Ag2O(PdO)/SiO2Preparation method and application of composite aerogel | 浙江工业大学 | 2021-03-12 | — | — | CN | claimed |
| CN-111215106-A | Preparation method of high-activity silicon carbide palladium catalyst | 陕西瑞科新材料股份有限公司 | 2020-06-02 | — | — | CN | claimed |
| CN-110718596-A | PN junction enhanced black silicon Schottky junction infrared detector and preparation method thereof | 复旦大学 | 2020-01-21 | — | — | CN | claimed |
| CN-110317631-A | The removal methods of thiophene sulphur in a kind of fuel oil | 浙江工业大学 | 2019-10-11 | — | — | CN | claimed |
| CN-104941681-B | Fluorescent sensing material and its application based on naphthalimide derivative | 华东理工大学 | 2019-08-13 | — | — | CN | claimed |
| CN-104603162-A | Catalytic oligomerization of octenes | RELIANCE IND LTD | 2015-05-06 | — | — | CN | claimed |
| CN-103296082-A | Metal oxide layer semiconductor field effect transistor | WUXI CSMC TECH SEMICONDUCTOR | 2013-09-11 | — | — | CN | claimed |
| US-7528423-B2 | Semiconductor device | PANASONIC CORPORATION (JP) | 2009-05-05 | — | — | US | claimed |
| US-20070210332-A1 | SEMICONDUCTOR DEVICE | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-09-13 | — | — | US | claimed |
| US-7217960-B2 | Semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2007-05-15 | — | — | US | claimed |
| CN-1280908-C | Programmable element for programming utilizing resistance value change by phase change | TOSHIBA KK (JP) | 2006-10-18 | — | — | CN | claimed |
| US-20060157729-A1 | Semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2006-07-20 | — | — | US | claimed |
| CN-1222021-C | MOSFET device system and method | SPINNAKER SEMICONDUCTOR INC (US) | 2005-10-05 | — | — | CN | claimed |
| CN-1434979-A | MOSFET device system and method | SPINNAKER SEMICONDUCTOR INC (US) | 2003-08-06 | — | — | CN | claimed |
| CN-1424763-A | Programmable element for programming utilizing resistance value change by phase change | TOSHIBA KK (JP) | 2003-06-18 | — | — | CN | claimed |
| US-5543364-A | Hydrogen out venting electronic package | THE AEROSPACE CORPORATION (US) | 1996-08-06 | — | — | US | claimed |