SCHEMBL7613809

SCHEMBL7613809

[AlH3].[Pd].[SiH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27790644 0.87
SCHEMBL28191802 0.87
SCHEMBL14635769 0.82
SCHEMBL23512 0.82
SCHEMBL27802619 0.82
SCHEMBL310479 0.82
SCHEMBL11882689 0.82
SCHEMBL1241039 0.82
SCHEMBL1241038 0.82
SCHEMBL27348066 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111068665-B Selective hydrogenation catalyst and preparation method thereof 中国石油化工股份有限公司 2023-08-11 CN disclosed
CN-111068665-A Selective hydrogenation catalyst and preparation method thereof 中国石油化工股份有限公司 2020-04-28 CN disclosed
CN-107574348-B A kind of method that rapid solidification method prepares silumin 泸溪县群祥新材料有限责任公司 2018-12-25 CN disclosed
CN-107574348-A A kind of method that rapid solidification method prepares silumin 泸溪县群祥新材料有限责任公司 2018-01-12 CN disclosed
US-20020089027-A1 Apparatus for filling apertures in a film layer on a semiconductor structure XU ZHENG (US) 2002-07-11 US disclosed
US-6313027-B1 Method for low thermal budget metal filling and planarization of contacts vias and trenches APPLIED MATERIALS, INC. 2001-11-06 US disclosed
US-6217721-B1 FILLING PLUG HAVING HIGH ASPECT RATIO BY PRECOATING INTERIOR OF PLUG HOLE OR OTHER APERTURE WITH LINER LAYER DEPOSITED BY PHYSICAL VAPOR DEPOSITION UTILIZING HIGH-DENSITY PLASMA APPLIED MATERIALS, INC. 2001-04-17 US disclosed
US-6136095-A Apparatus for filling apertures in a film layer on a semiconductor substrate APPLIED MATERIALS, INC. (US) 2000-10-24 US disclosed
US-5962923-A IN A MULTILAYER INTEGRATED CIRCUIT APPLIED MATERIALS, INC. (US) 1999-10-05 US disclosed
EP-0799903-A2 Methods of sputtering a metal onto a substrate and semiconductor processing apparatus APPLIED MATERIALS, INC. (US) 1997-10-08 EP disclosed
EP-0758148-A2 Method and apparatus for forming electrical contacts in multi-layer integrated circuits APPLIED MATERIALS, INC. (US) 1997-02-12 EP disclosed