⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11911867 | 0.88 | — | — | |
| SCHEMBL18615249 | 0.88 | — | — | |
| SCHEMBL10228471 | 0.88 | — | — | |
| SCHEMBL13924704 | 0.86 | — | — | |
| SCHEMBL14709888 | 0.85 | — | — | |
| SCHEMBL22357612 | 0.85 | — | — | |
| SCHEMBL21249180 | 0.84 | — | — | |
| SCHEMBL12254936 | 0.81 | F2R (0.30) | — | |
| SCHEMBL23382569 | 0.81 | — | — | |
| SCHEMBL10228459 | 0.80 | CTSV (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-10437148-B2 | Resist material, resist composition and method for forming resist pattern | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-10-08 | — | — | US | disclosed |
| US-20190056657-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2019-02-21 | — | — | US | disclosed |
| US-9785048-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-10-10 | — | — | US | disclosed |
| US-9746769-B2 | — | — | 2017-08-29 | — | — | US | disclosed |
| US-20170145142-A1 | RESIST MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2017-05-25 | — | — | US | disclosed |
| US-20160124303-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-05-05 | — | — | US | disclosed |
| US-9239517-B2 | Compound, radiation-sensitive composition and resist pattern formation method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2016-01-19 | — | — | US | disclosed |
| US-20150376157-A1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOL DERIVATIVE FOR USE IN THE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2015-12-31 | — | — | US | disclosed |
| US-8350096-B2 | Compound for resist and radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2013-01-08 | — | — | US | disclosed |
| US-20130004896-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION SPECIFICATION | ECHIGO MASATOSHI (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20130004896-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION SPECIFICATION | ECHIGO MASATOSHI (JP) | 2013-01-03 | — | — | US | disclosed |
| US-20110165516-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | ECHIGO MASATOSHI | 2011-07-07 | — | — | US | disclosed |
| US-20110165516-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | ECHIGO MASATOSHI | 2011-07-07 | — | — | US | disclosed |
| US-7919223-B2 | Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-7919223-B2 | Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-20080113294-A1 | Compound for Resist and Radiation-Sensitive Composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-05-15 | — | — | US | disclosed |
| US-20080113294-A1 | Compound for Resist and Radiation-Sensitive Composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-05-15 | — | — | US | disclosed |
| EP-1830228-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-09-05 | — | — | EP | disclosed |