SCHEMBL1242740

SCHEMBL1242740

C[Si](C)(C)O[Si](C)(CCl)CCl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28174482 0.86
SCHEMBL7940103 0.75
SCHEMBL1538986 0.73
SCHEMBL31375451 0.73
SCHEMBL2522520 0.73
SCHEMBL3849019 0.73
SCHEMBL2527583 0.73
SCHEMBL1241954 0.71 TSHR (0.30)
SCHEMBL5611243 0.71
SCHEMBL2528550 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US claimed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US claimed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US claimed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US claimed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed
US-4639379-A PLASMA POLYMERIZATION OF SILANE COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 1987-01-27 US claimed
US-20240308856-A1 SILICON PRECURSOR MATERIALS, SILICON-CONTAINING FILMS, AND RELATED METHODS ENTEGRIS, INC. 2024-09-19 US disclosed
CN-113388114-A Polysiloxane with double-end carboxyl alkyl end capping structure containing carboxyl ether group and preparation method thereof 浙江赢科新材料股份有限公司 2021-09-14 CN disclosed
CN-113388115-A Polydimethylsiloxane with double-end carboxyl-alkyl structure and preparation method thereof 浙江赢科新材料股份有限公司 2021-09-14 CN disclosed
US-4395527-A POLYIMIDES FROM AMINOPOLYSILOXANES M & T CHEMICALS INC. (US) 1983-07-26 US disclosed
EP-0057835-A1 Shaped articles of synthetic resins having improved surface properties and method for making same Shin-Etsu Chemical Co., Ltd. (JP) 1982-08-18 EP disclosed
EP-0054426-A2 Improvements in or relating to siloxanes M & T CHEMICALS, INC. (US) 1982-06-23 EP disclosed
US-4289651-A Supported catalysts for the polymerization of alpha-olefins THE STANDARD OIL COMPANY (US) 1981-09-15 US disclosed