SCHEMBL12464283

SCHEMBL12464283

CCC(C)(C)c1cccc(OC(C)(C)C)c1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 3/20 0.44
RAB9A P51151 3/20 0.44
POLB P06746 2/20 0.44
CYP2C9 P11712 2/20 0.44
MAPK1 P28482 3/20 0.42
SMN1; SMN2 Q16637 3/20 0.42
LMNA P02545 2/20 0.42
CASP3 P42574 1/20 0.42
ATM Q13315 1/20 0.42
SENP8 Q96LD8 1/20 0.42
SENP7 Q9BQF6 1/20 0.42
SENP6 Q9GZR1 1/20 0.42
MAPT P10636 2/20 0.41
KIF11 P52732 3/20 0.38
L3MBTL1 Q9Y468 2/20 0.36
BRAF P15056 1/20 0.36
SOD1 P00441 1/20 0.36
HTT P42858 2/20 0.35
CYP3A4 P08684 1/20 0.34
CYP2C19 P33261 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15356135 0.87 NPC1 (0.43) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL15356141 0.87 NPC1 (0.43) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL17552755 0.85 KIF11 (0.49) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL3435840 0.85 KIF11 (0.46) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL13191971 0.83 TP53 (0.52) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL15356133 0.82 NPC1 (0.40) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL13649193 0.82 CYP3A4 (0.47) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL24368144 0.81 NPC1 (0.60) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL23673284 0.81 NPC1 (0.42) NPC1RAB9APOLBCYP2C9MAPK1
SCHEMBL779789 0.81 MAPK1 (0.52) NPC1RAB9APOLBCYP2C9MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9971245-B2 Silicon-containing polymer, silicon-containing compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-20160229939-A1 SILICON-CONTAINING POLYMER, SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A RESIST UNDER LAYER FILM, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-08-11 US disclosed
US-9248693-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-02 US disclosed
US-8992790-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-31 US disclosed
US-8932953-B2 Composition for forming a silicon-containing resist underlayer film and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-01-13 US disclosed
US-20130284698-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-20130284699-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-7973088-B2 anionic block copolymers selecting from polyether sulfones, polyether ketones, polythioether ketones; use the verification of a distribution of the ionic segment in the surface region to measure proton conductivity; excellent proton conductivity in its thickness direction SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-07-05 US disclosed
US-20080053820-A1 POLYMER ELECTROLYTE MEMBRANE, METHOD FOR PRODUCING THE SAME, AND PROTON CONDUCTIVITY EVALUATION METHOD FOR POLYMER ELECTROLYTE MEMBRANE SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-03-06 US disclosed