SCHEMBL1248751

SCHEMBL1248751

CCCCCC[SiH2][SiH2]CC

nearest known ligand 0.47

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.47
THRB P10828 1/20 0.47
CES2 O00748 3/20 0.38
CES1 P23141 3/20 0.38
DNM1 Q05193 5/20 0.36
ALDH1A1 P00352 3/20 0.36
LMNA P02545 2/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
HSD17B10 Q99714 1/20 0.36
SLC22A1 O15245 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8469122 0.91 TSHR (0.57) TSHRTHRBCES2CES1DNM1
SCHEMBL8380675 0.91 TSHR (0.57) TSHRTHRBCES2CES1DNM1
SCHEMBL8384635 0.87 TSHR (0.50) TSHRTHRBCES2CES1DNM1
SCHEMBL8386116 0.79 TSHR (0.50) TSHRTHRBCES2CES1DNM1
SCHEMBL8385552 0.79 TSHR (0.50) TSHRTHRBCES2CES1DNM1
SCHEMBL8381755 0.79 TSHR (0.50) TSHRTHRBCES2CES1DNM1
SCHEMBL8381943 0.79 TSHR (0.50) TSHRTHRBCES2CES1DNM1
SCHEMBL8386048 0.79 TSHR (0.50) TSHRTHRBCES2CES1DNM1
SCHEMBL8381757 0.79 TSHR (0.50) TSHRTHRBCES2CES1DNM1
SCHEMBL6420524 0.78 TSHR (0.60) TSHRTHRBCES2CES1DNM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7888248-B2 Method of producing large area SiC substrates NORTHROP GRUMMAN SYSTEMS CORPORATION (US) 2011-02-15 US claimed
EP-2174357-A1 METHOD OF PRODUCING LARGE AREA SIC SUBSTRATES Northrop Grumman Systems Corporation (US) 2010-04-14 EP claimed
WO-2009011816-A1 METHOD OF PRODUCING LARGE AREA SIC SUBSTRATES NORTHROP GRUMMAN SYSTEMS CORPORATION (US) 2009-01-22 WO claimed
US-20090014756-A1 Method of producing large area SiC substrates NORTHROP GRUMMAN SYSTEMS CORPORATION 2009-01-15 US claimed