Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride Ion SCHEMBL33106 | 1.00 | TSHR (0.31) | TSHRALDH1A1 | |
| Fluoride SCHEMBL1260646 | 0.96 | — | — | |
| SCHEMBL197824 | 0.96 | TSHR (0.33) | TSHRALDH1A1 | |
| Hydrogen Sulfide SCHEMBL28090943 | 0.96 | TSHR (0.33) | TSHRALDH1A1 | |
| Lithium Ion SCHEMBL2504315 | 0.92 | TSHR (0.31) | TSHRALDH1A1 | |
| Iodide SCHEMBL2796494 | 0.92 | TSHR (0.31) | TSHRALDH1A1 | |
| Hydrochloric Acid SCHEMBL20896 | 0.92 | TSHR (0.31) | TSHRALDH1A1 | |
| Ammonia Solution, Strong SCHEMBL4552701 | 0.92 | TSHR (0.31) | TSHRALDH1A1 | |
| SCHEMBL5327333 | 0.92 | TSHR (0.31) | TSHRALDH1A1 | |
| SCHEMBL5327324 | 0.92 | TSHR (0.31) | TSHRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7888301-B2 | Aqueous-based cleaning compounds/etchants strippingmixtures at a low temperature and neutral pH so as not to damage metal wiring and dielectrics; including a fluoride, organic amine, organic solvent, water and optionally, chelating agents and/or surfactants | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2011-02-15 | — | — | US | claimed |
| EP-1689825-A4 | REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS | ADVANCED TECH MATERIALS (US) | 2008-09-24 | — | — | EP | claimed |
| US-20080006305-A1 | Resist, Barc and Gap Fill Material Stripping Chemical and Method | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2008-01-10 | — | — | US | claimed |
| US-7160815-B2 | Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-01-09 | — | — | US | claimed |
| EP-1689825-A1 | REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-08-16 | — | — | EP | claimed |
| WO-2005054405-A1 | REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS | ADVANCED TECHNOLOGY MATERIALS, INC., (US) | 2005-06-16 | — | — | WO | claimed |
| US-20050118813-A1 | Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations | ATMI, INC. | 2005-06-02 | — | — | US | claimed |
| CN-102498188-B | Ink jet printable etching inks and associated process | MERCK PATENT GMBH | 2014-09-17 | — | — | CN | disclosed |
| CN-102498188-A | Ink jet printable etching inks and associated process | MERCK PATENT GMBH | 2012-06-13 | — | — | CN | disclosed |
| CN-101242914-A | Dense fluid composition for removing hardened photoresist, post etch residue and/or bottom antireflective coating | ADVANCED TECH MATERIALS (US) | 2008-08-13 | — | — | CN | disclosed |
| CN-1938415-A | Use of supercritical fluid-based compositions to facilitate removal of silicon-containing particulate matter | ADVANCED TECH MATERIALS (US) | 2007-03-28 | — | — | CN | disclosed |