Fluoride

Fluoride

SCHEMBL1260646

C=CC[N+](CC=C)(CC=C)CC=C.F.[F-]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL1260648 0.96 TSHR (0.31)
Fluoride SCHEMBL27680383 0.96 TSHR (0.31)
Fluoride Ion SCHEMBL1260645 0.96 TSHR (0.31)
Fluoride Ion SCHEMBL33106 0.96 TSHR (0.31)
Hydrogen Sulfide SCHEMBL28090943 0.92 TSHR (0.33)
SCHEMBL197824 0.92 TSHR (0.33)
SCHEMBL596385 0.88 TSHR (0.31)
Iodide SCHEMBL2796494 0.88 TSHR (0.31)
SCHEMBL2504316 0.88 TSHR (0.31)
SCHEMBL5327324 0.88 TSHR (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7888301-B2 Aqueous-based cleaning compounds/etchants strippingmixtures at a low temperature and neutral pH so as not to damage metal wiring and dielectrics; including a fluoride, organic amine, organic solvent, water and optionally, chelating agents and/or surfactants ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2011-02-15 US claimed
EP-1689825-A4 REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS ADVANCED TECH MATERIALS (US) 2008-09-24 EP claimed
US-20080006305-A1 Resist, Barc and Gap Fill Material Stripping Chemical and Method TRUIST BANK, AS NOTES COLLATERAL AGENT 2008-01-10 US claimed
US-7160815-B2 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2007-01-09 US claimed
EP-1689825-A1 REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2006-08-16 EP claimed
WO-2005054405-A1 REMOVAL OF MEMS SACRIFICIAL LAYERS USING SUPERCRITICAL FLUID/CHEMICAL FORMULATIONS ADVANCED TECHNOLOGY MATERIALS, INC., (US) 2005-06-16 WO claimed
US-20050118813-A1 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations ATMI, INC. 2005-06-02 US claimed
JP-9286785-A None JP disclosed
JP-H09286785-A FLUORINE-CONTAINING DIOXOLANE, ORGANIC SOLVENT FOR ELECTROLYSIS, LITHIUM SECONDARY CELL AND ELECTRIC DOUBLE LAYER CAPACITOR SANYO CHEM IND LTD 1997-11-04 JP disclosed