⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17422652 | 0.74 | — | — | |
| SCHEMBL1275267 | 0.71 | — | — | |
| SCHEMBL26667676 | 0.67 | — | — | |
| SCHEMBL7785186 | 0.67 | — | — | |
| SCHEMBL4623366 | 0.67 | — | — | |
| Methylamine SCHEMBL8768083 | 0.63 | — | — | |
| SCHEMBL7630301 | 0.63 | — | — | |
| SCHEMBL27540431 | 0.63 | — | — | |
| SCHEMBL27678064 | 0.63 | — | — | |
| SCHEMBL27815842 | 0.63 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 85 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7951730-B2 | Decreasing the etch rate of silicon nitride by carbon addition | APPLIED MATERIALS, INC. (US) | 2011-05-31 | — | — | US | claimed |
| US-20070275569-A1 | METHODS AND APPARATUS FOR E-BEAM TREATMENT USED TO FABRICATE INTEGRATED CIRCUIT DEVICES | APPLIED MATERIALS, INC. | 2007-11-29 | — | — | US | claimed |
| US-6936551-B2 | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices | APPLIED MATERIALS INC. (US) | 2005-08-30 | — | — | US | claimed |
| US-6936309-B2 | Hardness improvement of silicon carboxy films | APPLIED MATERIALS, INC. (US) | 2005-08-30 | — | — | US | claimed |
| US-6914014-B2 | Method for curing low dielectric constant film using direct current bias | APPLIED MATERIALS, INC. (US) | 2005-07-05 | — | — | US | claimed |
| US-6897163-B2 | Method for depositing a low dielectric constant film | APPLIED MATERIALS, INC. (US) | 2005-05-24 | — | — | US | claimed |
| US-20040234688-A1 | Cyclic organosilicon compounds, aliphatic organosilicon compounds, aliphatic hydrocarbon compounds, oxidizing gases, a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface | APPLIED MATERIALS, INC. | 2004-11-25 | — | — | US | claimed |
| US-6815373-B2 | Use of cyclic siloxanes for hardness improvement of low k dielectric films | APPLIED MATERIALS INC. | 2004-11-09 | — | — | US | claimed |
| US-6797643-B2 | Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power | APPLIED MATERIALS INC. | 2004-09-28 | — | — | US | claimed |
| US-6784119-B2 | Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition | APPLIED MATERIALS INC. | 2004-08-31 | — | — | US | claimed |
| US-20040101632-A1 | Method for curing low dielectric constant film by electron beam | APPLIED MATERIALS, INC. | 2004-05-27 | — | — | US | claimed |
| US-20040082193-A1 | PLASMA ENHANCED CVD LOW K CARBON-DOPED SILICON OXIDE FILM DEPOSITION USING VHF-RF POWER | APPLIED MATERIALS, INC | 2004-04-29 | — | — | US | claimed |
| US-20040029400-A1 | Method of decreasing the K value in SIOC layer deposited by chemical vapor deposition | APPLIED MATERIALS, INC. | 2004-02-12 | — | — | US | claimed |
| US-20030232495-A1 | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices | APPLIED MATERIALS, INC. | 2003-12-18 | — | — | US | claimed |
| US-20030211244-A1 | Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric | APPLIED MATERIALS, INC. | 2003-11-13 | — | — | US | claimed |
| US-20030194496-A1 | Methods for depositing dielectric material | APPLIED MATERIALS, INC. | 2003-10-16 | — | — | US | claimed |
| US-20030194880-A1 | Use of cyclic siloxanes for hardness improvement | APPLIED MATERIALS, INC. | 2003-10-16 | — | — | US | claimed |
| US-20030194495-A1 | Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric | APPLIED MATERIALS, INC. | 2003-10-16 | — | — | US | claimed |
| US-20030186000-A1 | Hardness improvement of silicon carboxy films | APPLIED MATERIALS, INC. | 2003-10-02 | — | — | US | claimed |
| EP-0175614-B1 | MAGNETIC RECORDING MEDIUM AND MANUFACTURING METHOD THEREOF | Shin-Etsu Chemical Co., Ltd. (JP) | 1989-03-08 | — | — | EP | claimed |