SCHEMBL1271018

SCHEMBL1271018

C[Si](C)(C)[Si](C)(C)[Si](C)(C)C

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8498498 0.86 ALDH1A1 (0.30) ALDH1A1
SCHEMBL11023475 0.80
SCHEMBL31142120 0.80
SCHEMBL5835639 0.72
SCHEMBL31316946 0.68 ALDH1A1 (0.42) ALDH1A1
SCHEMBL15283779 0.68
SCHEMBL787974 0.68
SCHEMBL8499761 0.68 ALDH1A1 (0.42) ALDH1A1
SCHEMBL15284208 0.68
SCHEMBL8826752 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 79 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6716770-B2 Vapor deposition using organosilicon compound and fluorohydrocarbon plasma; dielectric AIR PRODUCTS AND CHEMICALS, INC. 2004-04-06 US claimed
US-20030049460-A1 Low dielectric constant material and method of processing by CVD AIR PRODUCTS AND CHEMICALS, INC. 2003-03-13 US claimed
EP-1260606-A2 Low dielectric constant material and method of processing by cvd AIR PRODUCTS AND CHEMICALS, INC. (US) 2002-11-27 EP claimed
US-5498739-A Method for introducing hydrocarbons into chlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1996-03-12 US claimed
US-11912889-B2 Silicon-containing polymer, film-forming composition, method for forming silicon-containing polymer coating, method for forming silica coating, and production method for silicon-containing polymer TOKYO OHKA KOGYO CO., LTD. (JP) 2024-02-27 US disclosed
US-11773290-B2 Method for applying high performance silicon-based coating compositions BURNING BUSH GROUP, LLC (US) 2023-10-03 US disclosed
US-20230253626-A1 NONAQUEOUS ELECTROLYTIC SOLUTION AND NONAQUEOUS ELECTROLYTIC SOLUTION SECONDARY BATTERY USING SAME MITSUBISHI CHEMICAL CORPORATION (JP) 2023-08-10 US disclosed
US-11688881-B2 Nonaqueous electrolytic solution and nonaqueous electrolytic solution secondary battery using same MITSUBISHI CHEMICAL CORPORATION (JP) 2023-06-27 US disclosed
CN-115287069-B C-free etching solution for inhibiting silicon dioxide etching 湖北兴福电子材料股份有限公司 2023-06-09 CN disclosed
CN-115287069-A C-free etching solution for inhibiting silicon dioxide etching 湖北兴福电子材料有限公司 2022-11-04 CN disclosed
EP-3231892-B1 MECHANICAL ENHANCEMENT OF DENSE AND POROUS ORGANOSILICATE MATERIALS BY UV EXPOSURE VERSUM MAT US LLC (US) 2020-08-05 EP disclosed
US-20180223045-A1 POLYIMIDE PRECURSOR COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2018-08-09 US disclosed
EP-0659754-B1 Method for introducing hydrocarbons into chlorosilanes SHINETSU CHEMICAL CO (JP) 1999-11-17 EP disclosed
EP-0774533-A1 Method for depositing Si-O containing coatings DOW CORNING CORPORATION (US) 1997-05-21 EP disclosed
EP-0771886-A1 Method for depositing amorphous SiNC coatings DOW CORNING CORPORATION (US) 1997-05-07 EP disclosed
US-5498739-A Method for introducing hydrocarbons into chlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1996-03-12 US disclosed
EP-0659754-A1 Method for introducing hydrocarbons into chlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1995-06-28 EP disclosed
US-5068381-A Reaction of silane with acetylene compound for use as a crosslinking agent and as a photosensitive agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 1991-11-26 US disclosed
US-4588801-A Polysilane positive photoresist materials and methods for their use THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY (US) 1986-05-13 US disclosed
US-4587205-A Method of using polysilane positive photoresist materials THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY (US) 1986-05-06 US disclosed