SCHEMBL1284795

SCHEMBL1284795

[SiH3]C[SiH2]C[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12853021 0.75
SCHEMBL3481574 0.71
SCHEMBL16154018 0.71
SCHEMBL21773391 0.69
SCHEMBL13142320 0.59
SCHEMBL7955599 0.47
SCHEMBL399794 0.47
SCHEMBL4898698 0.43
Ammonia Solution, Strong SCHEMBL15440386 0.43
SCHEMBL5727843 0.43

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 193 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12624248-B2 Curable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane L'AIR LIQUIDE, SOCIETÉ ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDE (FR) 2026-05-12 US claimed
WO-2025226985-A1 PASSIVATION OF POLYSILICON MATERIAL AND SELECTIVE DEPOSITION OF DIELECTRIC MATERIAL UTILIZING ALKYNES VERSUM MATERIALS US, LLC (US) 2025-10-30 WO claimed
US-20250270694-A1 PROCESSING APPARATUS, PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM Kokusai Electric Corporation (JP) 2025-08-28 US claimed
US-12378666-B2 Silicon carbide thin films and vapor deposition methods thereof GELEST, INC. (US) 2025-08-05 US claimed
US-12281386-B2 Method of processing substrate for forming film containing silicon by supplying precursor containing Si—C bonds Kokusai Electric Corporation (JP) 2025-04-22 US claimed
US-20240304438-A1 COMPOSITION AND METHODS USING SAME FOR CARBON DOPED SILICON CONTAINING FILMS VERSUM MAT US LLC (US) 2024-09-12 US claimed
US-20240271279-A1 SILICON CARBIDE THIN FILMS AND VAPOR DEPOSITION METHODS THEREOF GELEST, INC. 2024-08-15 US claimed
EP-3620550-B1 METHODS FOR MAKING SILICON CONTAINING FILMS THAT HAVE HIGH CARBON CONTENT VERSUM MAT US LLC (US) 2024-05-01 EP claimed
CN-115038741-B Curable formulations for forming low k dielectric silicon-containing films using polycarbosilazanes 乔治洛德方法研究和开发液化空气有限公司 2024-04-02 CN claimed
US-20230377874-A1 COMPOSITION AND METHODS USING SAME FOR CARBON DOPED SILICON CONTAINING FILMS VERSUM MATERIALS US, LLC 2023-11-23 US claimed
US-20120122302-A1 Apparatus And Methods For Deposition Of Silicon Carbide And Silicon Carbonitride Films APPLIED MATERIALS, INC. (US) 2012-05-17 US claimed
WO-2012061593-A2 APPARATUS AND METHODS FOR DEPOSITION OF SILICON CARBIDE AND SILICON CARBONITRIDE FILMS APPLIED MATERIALS, INC. (US) 2012-05-10 WO claimed
US-20120088193-A1 Radiation Patternable CVD Film APPLIED MATERIALS, INC. (US) 2012-04-12 US claimed
EP-1305823-A4 PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER KOREA RES INST CHEM TECH (KR) 2006-07-05 EP claimed
US-6800133-B1 Process for growing a magnesium oxide film on a silicon (100) substrate coated with a cubic silicon carbide butter layer KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 2004-10-05 US claimed
EP-1305823-A1 PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER Korea Research Institute of Chemical Technology (KR) 2003-05-02 EP claimed
WO-2002013246-A1 PROCESS FOR GROWING A MAGNESIUM OXIDE FILM ON A SILICON (100) SUBSTRATE COATED WITH A CUBIC SILICON CARBIDE BUFFER LAYER KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 2002-02-14 WO claimed
EP-0723600-B1 PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS KOREA RES INST CHEM TECH (KR) 1999-07-07 EP claimed
EP-0723600-A1 PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 1996-07-31 EP claimed
WO-1995010638-A1 PROCESS FOR THE PREPARATION OF SILICON CARBIDE FILMS USING SINGLE ORGANOSILICON COMPOUNDS KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY (KR) 1995-04-20 WO claimed