⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL596607 | 0.89 | — | — | |
| SCHEMBL297988 | 0.87 | — | — | |
| SCHEMBL16651215 | 0.75 | — | — | |
| SCHEMBL1262145 | 0.75 | — | — | |
| SCHEMBL10477184 | 0.75 | — | — | |
| SCHEMBL23391294 | 0.75 | — | — | |
| Phosphine SCHEMBL7096319 | 0.75 | — | — | |
| SCHEMBL1049415 | 0.75 | — | — | |
| Ammonia Solution, Strong SCHEMBL4451353 | 0.75 | — | — | |
| SCHEMBL231860 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 205 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11683989-B2 | Data storage devices and methods for manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-06-20 | — | — | US | claimed |
| CN-112289923-B | Magnetic tunnel junction structure of magnetic random access memory | 上海磁宇信息科技有限公司 | 2023-05-23 | — | — | CN | claimed |
| CN-107017337-B | Magnetic memory device and method of manufacturing the same | 三星电子株式会社 | 2021-10-15 | — | — | CN | claimed |
| US-20210167283-A1 | DATA STORAGE DEVICES AND METHODS FOR MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-06-03 | — | — | US | claimed |
| CN-112750944-A | Magnetic tunnel junction structure and magnetic random access memory | 上海磁宇信息科技有限公司 | 2021-05-04 | — | — | CN | claimed |
| CN-112736193-A | Magnetic tunnel junction structure and magnetic random access memory thereof | 上海磁宇信息科技有限公司 | 2021-04-30 | — | — | CN | claimed |
| CN-112736194-A | Magnetic tunnel junction structure and magnetic random access memory | 上海磁宇信息科技有限公司 | 2021-04-30 | — | — | CN | claimed |
| CN-112652704-A | Magnetic tunnel junction cell with ultra-thin synthetic antiferromagnetic layer | 上海磁宇信息科技有限公司 | 2021-04-13 | — | — | CN | claimed |
| CN-112635649-A | Magnetic tunnel junction structure and magnetic random access memory | 上海磁宇信息科技有限公司 | 2021-04-09 | — | — | CN | claimed |
| CN-112635654-A | Magnetic tunnel junction structure and magnetic random access memory | 上海磁宇信息科技有限公司 | 2021-04-09 | — | — | CN | claimed |
| US-20160133831-A1 | METHOD OF FORMING METAL OXIDE LAYER AND MAGNETIC MEMORY DEVICE INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-05-12 | — | — | US | claimed |
| US-9065039-B2 | Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-06-23 | — | — | US | claimed |
| US-20150102440-A1 | MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, ELECTRONIC SYSTEMS, AND MEMORY SYSTEMS, AND METHODS OF FABRICATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-04-16 | — | — | US | claimed |
| US-8772846-B2 | Magnetic tunneling junction devices, memories, memory systems, and electronic devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-07-08 | — | — | US | claimed |
| US-20130213282-A1 | METHOD OF OPERATING A COMBUSION INSTALLATION AND USE OF SUCH A METHOD FOR INHIBITING VANADIUM CORROSION | MESKERS JR DONALD A (US) | 2013-08-22 | — | — | US | claimed |
| US-20130042081-A1 | MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-02-14 | — | — | US | claimed |
| US-20120236631-A1 | MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, ELECTRONIC SYSTEMS, AND MEMORY SYSTEMS, AND METHODS OF FABRICATING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-09-20 | — | — | US | claimed |
| EP-2236585-B1 | Method of operating a thermal device and use of such a method to inhibit vanadium corrosion | GE ENERGY PRODUCTS FRANCE SNC (FR) | 2012-05-16 | — | — | EP | claimed |
| WO-2012047839-A1 | METHOD OF OPERATING A COMBUSION INSTALLATION AND USE OF SUCH A METHOD FOR INHIBITING VANADIUM CORROSION | GENERAL ELECTRIC COMPANY (US) | 2012-04-12 | — | — | WO | claimed |
| US-20100080894-A1 | FABRICATING METHOD OF MAGNETORESISTIVE ELEMENT, AND STORAGE MEDIUM | CANON ANELVA CORPORATION (JP) | 2010-04-01 | — | — | US | claimed |