⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9404232 | 1.00 | — | — | |
| SCHEMBL9404223 | 0.78 | — | — | |
| SCHEMBL2862483 | 0.78 | — | — | |
| SCHEMBL1707235 | 0.67 | — | — | |
| SCHEMBL1482496 | 0.67 | — | — | |
| SCHEMBL1706226 | 0.65 | — | — | |
| SCHEMBL6057981 | 0.65 | — | — | |
| SCHEMBL2869842 | 0.61 | — | — | |
| SCHEMBL13915428 | 0.56 | — | — | |
| SCHEMBL15166545 | 0.53 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240361695-A1 | STRUCTURES INCLUDING A SiOCN PHOTORESIST ADHESION LAYER AND METAL-OXIDE RESIST AND METHODS OF FORMING SAME | ASM IP HOLDING B.V. (NL) | 2024-10-31 | — | — | US | claimed |
| US-20230288810-A1 | METHOD OF FORMING A STRUCTURE COMPRISING A PHOTORESIST UNDERLAYER | ASM IP HOLDING B.V. (NL) | 2023-09-14 | — | — | US | claimed |
| US-20220350248-A1 | METHOD OF FORMING AN ADHESION LAYER ON A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING SAME | ASM IP HOLDING B.V. (NL) | 2022-11-03 | — | — | US | claimed |
| US-20250291252-A1 | STRUCTURE INCLUDING A PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME | ASM IP HOLDING B.V. (NL) | 2025-09-18 | — | — | US | disclosed |
| US-20240377751-A1 | STRUCTURE INCLUDING SILICON GERMANIUM OXIDE PHOTORESIST UNDERLAYER AND METHOD OF FORMING SAME | ASM IP HOLDING B.V. (NL) | 2024-11-14 | — | — | US | disclosed |
| US-20240361695-A1 | STRUCTURES INCLUDING A SiOCN PHOTORESIST ADHESION LAYER AND METAL-OXIDE RESIST AND METHODS OF FORMING SAME | ASM IP HOLDING B.V. (NL) | 2024-10-31 | — | — | US | disclosed |
| US-20230288810-A1 | METHOD OF FORMING A STRUCTURE COMPRISING A PHOTORESIST UNDERLAYER | ASM IP HOLDING B.V. (NL) | 2023-09-14 | — | — | US | disclosed |
| US-20220350248-A1 | METHOD OF FORMING AN ADHESION LAYER ON A PHOTORESIST UNDERLAYER AND STRUCTURE INCLUDING SAME | ASM IP HOLDING B.V. (NL) | 2022-11-03 | — | — | US | disclosed |
| EP-2154708-B1 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | SHINETSU CHEMICAL CO (JP) | 2017-07-26 | — | — | EP | disclosed |
| US-8809561-B2 | Hybrid, organic-inorganic, crystalline, porous silicates and metal-silicates | ENI S.P.A. (IT) | 2014-08-19 | — | — | US | disclosed |
| US-8277600-B2 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-10-02 | — | — | US | disclosed |
| US-20120059181-A1 | HYBRID, ORGANIC-INORGANIC, CRYSTALLINE, POROUS SILICATES AND METAL-SILICATES | ENI S.P.A. (IT) | 2012-03-08 | — | — | US | disclosed |
| US-20100040895-A1 | HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-02-18 | — | — | US | disclosed |
| EP-2154708-A1 | High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-02-17 | — | — | EP | disclosed |