SCHEMBL1295489

SCHEMBL1295489

COC(O[Ti](OC(OC)C(C)C)(OC(OC)C(C)C)OC(OC)C(C)C)C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1296484 0.92
SCHEMBL133571 0.75
SCHEMBL2521347 0.65
SCHEMBL2149222 0.65
SCHEMBL17245048 0.65
SCHEMBL28699607 0.65
SCHEMBL3890486 0.62
SCHEMBL17468497 0.62
SCHEMBL3993263 0.62
SCHEMBL15528838 0.62

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1698614-B1 METAL COMPOUND, MATERIAL FOR FORMING THIN FILM AND METHOD FOR PREPARING THIN FILM ADEKA CORP (JP) 2011-07-13 EP claimed
US-20070122947-A1 Metal compound, material for thin film formation, and process of forming thin film ADEKA CORPORATION (JP) 2007-05-31 US claimed
EP-1698614-A1 METAL COMPOUND, MATERIAL FOR FORMING THIN FILM AND METHOD FOR PREPARING THIN FILM Asahi Denka Co., Ltd. (JP) 2006-09-06 EP claimed
US-20050272200-A1 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-12-08 US claimed
EP-3178808-B1 ALKOXIDE COMPOUND, THIN FILM-FORMING STARTING MATERIAL, THIN FILM FORMATION METHOD AND ALCOHOL COMPOUND ADEKA CORP (JP) 2024-11-06 EP disclosed
US-11618762-B2 Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound ADEKA CORPORATION (JP) 2023-04-04 US disclosed
US-20220017554-A1 COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, METHOD FOR MANUFACTURING THIN FILM, AND AMIDINE COMPOUND ADEKA CORPORATION (JP) 2022-01-20 US disclosed
US-11161867-B2 Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound ADEKA CORPORATION (JP) 2021-11-02 US disclosed
EP-3505511-B1 DIAZADIENYL COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, AND METHOD FOR PRODUCING THIN FILM ADEKA CORP (JP) 2021-05-26 EP disclosed
US-10920313-B2 Diazadienyl compound, raw material for forming thin film, and method for manufacturing thin film ADEKA CORPORATION (JP) 2021-02-16 US disclosed
US-10882874-B2 Vanadium compound ADEKA CORPORATION (JP) 2021-01-05 US disclosed
EP-3476827-B1 VANADIUM COMPOUND, STARTING MATERIAL FOR THIN FILM FORMATION, AND METHOD FOR PRODUCING THIN FILM ADEKA CORP (JP) 2020-09-16 EP disclosed
EP-1698614-B1 METAL COMPOUND, MATERIAL FOR FORMING THIN FILM AND METHOD FOR PREPARING THIN FILM ADEKA CORP (JP) 2011-07-13 EP disclosed
US-20110079262-A1 DIFFUSING AGENT COMPOSITION, METHOD OF FORMING IMPURITY DIFFUSION LAYER, AND SOLAR BATTERY TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-07 US disclosed
US-7714155-B2 Alkoxide compound, material for thin film formation, and process for thin film formation ADEKA CORPORATION (JP) 2010-05-11 US disclosed
US-20100028536-A1 METAL COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS OF FORMING THIN FILM ADEKA CORPORATION (JP) 2010-02-04 US disclosed
US-20090320771-A1 IONIC LIQUID MEDIUMS FOR HOLDING SOLID PHASE PROCESS GAS PRECURSORS MATHESON TRI-GAS (US) 2009-12-31 US disclosed
US-20090035464-A1 Alkoxide compound, material for thin film formation, and process for thin film formation ADEKA CORPORATION (JP) 2009-02-05 US disclosed
US-20070122947-A1 Metal compound, material for thin film formation, and process of forming thin film ADEKA CORPORATION (JP) 2007-05-31 US disclosed
EP-1698614-A1 METAL COMPOUND, MATERIAL FOR FORMING THIN FILM AND METHOD FOR PREPARING THIN FILM Asahi Denka Co., Ltd. (JP) 2006-09-06 EP disclosed