⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1295491 | 0.79 | — | — | |
| SCHEMBL133571 | 0.78 | — | — | |
| SCHEMBL17245048 | 0.67 | — | — | |
| SCHEMBL28699607 | 0.67 | — | — | |
| SCHEMBL17468497 | 0.65 | — | — | |
| SCHEMBL3890486 | 0.65 | — | — | |
| SCHEMBL3887960 | 0.65 | — | — | |
| SCHEMBL3993263 | 0.65 | — | — | |
| SCHEMBL1296617 | 0.65 | — | — | |
| SCHEMBL3987695 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250113489-A1 | GERMANIUM-DOPED CHARGE TRAPPING LAYER, RELATED DEVICES, RELATED SYSTEMS, AND RELATED METHODS | ASM IP HOLDING B.V. (NL) | 2025-04-03 | — | — | US | claimed |
| EP-1698614-B1 | METAL COMPOUND, MATERIAL FOR FORMING THIN FILM AND METHOD FOR PREPARING THIN FILM | ADEKA CORP (JP) | 2011-07-13 | — | — | EP | claimed |
| US-20070122947-A1 | Metal compound, material for thin film formation, and process of forming thin film | ADEKA CORPORATION (JP) | 2007-05-31 | — | — | US | claimed |
| EP-1698614-A1 | METAL COMPOUND, MATERIAL FOR FORMING THIN FILM AND METHOD FOR PREPARING THIN FILM | Asahi Denka Co., Ltd. (JP) | 2006-09-06 | — | — | EP | claimed |
| US-20260005017-A1 | METHODS FOR FORMING A DOPED HIGH-K LAYER ON A SUBSTRATE | ASM IP HOLDING BV (NL) | 2026-01-01 | — | — | US | disclosed |
| US-20250289790-A1 | UV LIGHT STABILIZERS | BASF SE (DE) | 2025-09-18 | — | — | US | disclosed |
| US-20250273458-A1 | METHODS FOR FORMING SEMICONDUCTOR STRUCTURES COMPRISING HAFNIUM ZIRCONIUM OXIDE LAYERS AND METAL OXIDE LAYERS, AND ASSOCIATED STRUCTURES, AND SYSTEMS | ASM IP HOLDING B.V. (NL) | 2025-08-28 | — | — | US | disclosed |
| US-20250171407-A1 | ULTRAVIOLET ABSORBER | BASF SE (DE) | 2025-05-29 | — | — | US | disclosed |
| US-20250113489-A1 | GERMANIUM-DOPED CHARGE TRAPPING LAYER, RELATED DEVICES, RELATED SYSTEMS, AND RELATED METHODS | ASM IP HOLDING B.V. (NL) | 2025-04-03 | — | — | US | disclosed |
| US-20250101579-A1 | METHODS FOR FORMING A DOPED HAFNIUM ZIRCONIUM OXIDE LAYER ON A SUBSTRATE | ASM IP HOLDING B.V. (NL) | 2025-03-27 | — | — | US | disclosed |
| EP-4519249-A1 | UV LIGHT STABILIZERS | BASF SE (DE) | 2025-03-12 | — | — | EP | disclosed |
| EP-4482827-A1 | ULTRAVIOLET ABSORBER | BASF SE (DE) | 2025-01-01 | — | — | EP | disclosed |
| EP-2620455-A1 | METHOD FOR PRODUCING TERMINAL ACRYLIC-MODIFIED POLYBUTADIENE OR TERMINAL ACRYLIC-MODIFIED HYDROGENATED POLYBUTADIENE, AND COMPOSITION CONTAINING SAME | Nippon Soda Co., Ltd. (JP) | 2013-07-31 | — | — | EP | disclosed |
| US-20130165586-A1 | METHOD FOR PRODUCING TERMINAL ACRYLIC-MODIFIED POLYBUTADIENE OR TERMINAL ACRYLIC-MODIFIED HYDROGENATED POLYBUTADIENE, AND COMPOSITION CONTAINING SAME | NIPPON SODA CO., LTD. (JP) | 2013-06-27 | — | — | US | disclosed |
| US-20120276721-A1 | METHOD OF FORMING AN OXIDE LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING THE OXIDE LAYER | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-11-01 | — | — | US | disclosed |
| EP-1698614-B1 | METAL COMPOUND, MATERIAL FOR FORMING THIN FILM AND METHOD FOR PREPARING THIN FILM | ADEKA CORP (JP) | 2011-07-13 | — | — | EP | disclosed |
| US-20100028536-A1 | METAL COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND PROCESS OF FORMING THIN FILM | ADEKA CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-20070122947-A1 | Metal compound, material for thin film formation, and process of forming thin film | ADEKA CORPORATION (JP) | 2007-05-31 | — | — | US | disclosed |
| US-20060240677-A1 | Method for manufacturing semiconductor device and substrate processing apparatus | HITACHI KOKUSAI ELECTRIC INC., (JP) | 2006-10-26 | — | — | US | disclosed |
| EP-1698614-A1 | METAL COMPOUND, MATERIAL FOR FORMING THIN FILM AND METHOD FOR PREPARING THIN FILM | Asahi Denka Co., Ltd. (JP) | 2006-09-06 | — | — | EP | disclosed |