SCHEMBL1304207

SCHEMBL1304207

CCCCCC(=O)CC(=O)[O-].CCCCCC(=O)CC(=O)[O-].[Cu+2]

nearest known ligand 0.61

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
HAO1 Q9UJM8 1/20 0.61
CES2 O00748 4/20 0.54
CES1 P23141 4/20 0.54
MAPT P10636 1/20 0.50
KMT2A Q03164 1/20 0.50
CA1 P00915 1/20 0.50
FABP3 P05413 5/20 0.48
AKR1B1 P15121 1/20 0.46
HSP90AA1 P07900 1/20 0.45
ALDH1A1 P00352 1/20 0.44
TSHR P16473 1/20 0.44
SLC22A6 Q4U2R8 1/20 0.44
SLC22A8 Q8TCC7 1/20 0.44
GPR84 Q9NQS5 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9851882 0.98 HAO1 (0.64) HAO1CES2CES1MAPTKMT2A
SCHEMBL29674754 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A
SCHEMBL29374985 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A
SCHEMBL28225602 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A
SCHEMBL1304419 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A
SCHEMBL28346735 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A
SCHEMBL531121 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A
SCHEMBL29035603 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A
SCHEMBL28913631 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A
Silver SCHEMBL17075587 0.95 HAO1 (0.61) HAO1CES2CES1MAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8053029-B2 Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricated by the same and method for fabricating In2S3 thin film therefrom SAMSUNG SDI CO., LTD. (KR) 2011-11-08 US claimed
US-20080012015-A1 METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-01-17 US claimed
US-8053029-B2 Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricated by the same and method for fabricating In2S3 thin film therefrom SAMSUNG SDI CO., LTD. (KR) 2011-11-08 US disclosed
US-20080012015-A1 METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-01-17 US disclosed