SCHEMBL1304699

SCHEMBL1304699

CCCC(CC)NC(O)=S.NC(O)=S.[In]

nearest known ligand 0.35

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
TAS1R3 Q7RTX0 7/20 0.35
TAS1R1 Q7RTX1 7/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10815481 0.92 TAS1R3 (0.39) TAS1R3TAS1R1
SCHEMBL8601541 0.85 PLA2G2C (0.36)
SCHEMBL16931565 0.83 PLA2G2C (0.35)
SCHEMBL16931574 0.83 PLA2G2C (0.35)
SCHEMBL16628367 0.83 CA12 (0.35)
SCHEMBL16628486 0.83 CA12 (0.35)
SCHEMBL11817849 0.81 TAS1R3 (0.38) TAS1R3TAS1R1
SCHEMBL5074015 0.81 PLA2G2C (0.39) TAS1R3TAS1R1
SCHEMBL8813135 0.78 PLA2G2C (0.41)
SCHEMBL3613760 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8053029-B2 Method for fabricating CuInS2 thin film by metal organic chemical vapor deposition, CuInS2 thin film fabricated by the same and method for fabricating In2S3 thin film therefrom SAMSUNG SDI CO., LTD. (KR) 2011-11-08 US disclosed
US-20080012015-A1 METHOD FOR FABRICATING CuInS2 THIN FILM BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, CuInS2 THIN FILM FABRICATED BY THE SAME AND METHOD FOR FABRICATING In2S3 THIN FILM THEREFROM SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-01-17 US disclosed