SCHEMBL1309830

SCHEMBL1309830

[BiH3].[Nb].[SrH2].[Ta]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2354140 0.87
SCHEMBL29018982 0.87
Water SCHEMBL28130028 0.75
SCHEMBL17240176 0.75
SCHEMBL4365754 0.75
SCHEMBL28005927 0.75
Water SCHEMBL16781663 0.75
Water SCHEMBL5783055 0.75
SCHEMBL28237510 0.75
SCHEMBL4830667 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8053251-B2 Temperature-compensated ferroelectric capacitor device, and its fabrication RAYTHEON COMPANY (US) 2011-11-08 US disclosed
US-20060189003-A1 Temperature-compensated ferroelectric capacitor device, and its fabrication DOUGHERTY T K 2006-08-24 US disclosed
WO-2004030100-A1 TEMPERATURE-COMPENSATED FERROELECTRIC CAPACITOR DEVICE, AND ITS FABRICATION RAYTHEON COMPANY (US) 2004-04-08 WO disclosed
US-20040061990-A1 Temperature-compensated ferroelectric capacitor device, and its fabrication RAYTHEON COMPANY 2004-04-01 US disclosed
CN-1329750-A Low imprint ferroelectric material for long retention memory and method of making same SYMETRIX CORP (US) 2002-01-02 CN disclosed