Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL5783055 | 1.00 | — | — | |
| SCHEMBL2354140 | 0.87 | — | — | |
| Water SCHEMBL4649936 | 0.87 | — | — | |
| Water SCHEMBL7721919 | 0.75 | — | — | |
| Water SCHEMBL20512284 | 0.75 | — | — | |
| Water SCHEMBL16781664 | 0.75 | — | — | |
| Water SCHEMBL9571768 | 0.75 | — | — | |
| SCHEMBL1309830 | 0.75 | — | — | |
| Water SCHEMBL887108 | 0.75 | — | — | |
| Water SCHEMBL27739932 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10192972-B2 | Semiconductor ferroelectric storage transistor and method for manufacturing same | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2019-01-29 | — | — | US | disclosed |
| US-20180006130-A1 | SEMICONDUCTOR FERROELECTRIC STORAGE TRANSISTOR AND METHOD FOR MANUFACTURING SAME | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2018-01-04 | — | — | US | disclosed |
| CN-104471702-B | Semiconductor ferroelectric memory transistor and method of manufacturing the same | 独立行政法人产业技术综合研究所 | 2017-12-29 | — | — | CN | disclosed |
| CN-107305866-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2017-10-31 | — | — | CN | disclosed |
| CN-107275210-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2017-10-20 | — | — | CN | disclosed |
| US-9780186-B2 | Semiconductor ferroelectric storage transistor and method for manufacturing same | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2017-10-03 | — | — | US | disclosed |
| CN-107026126-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2017-08-08 | — | — | CN | disclosed |
| CN-106952955-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2017-07-14 | — | — | CN | disclosed |
| CN-106920839-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2017-07-04 | — | — | CN | disclosed |
| CN-106803484-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2017-06-06 | — | — | CN | disclosed |
| CN-106684041-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2017-05-17 | — | — | CN | disclosed |
| CN-106683990-A | Semiconductor element and manufacturing method thereof | 联华电子股份有限公司 | 2017-05-17 | — | — | CN | disclosed |
| CN-106531793-A | Semiconductor structure with epitaxial layer | 联华电子股份有限公司 | 2017-03-22 | — | — | CN | disclosed |
| CN-106252391-A | Semiconductor structure and manufacturing method thereof | 联华电子股份有限公司 | 2016-12-21 | — | — | CN | disclosed |
| CN-103000518-B | method of forming a non-planar transistor | UNITED MICROELECTRONICS CORP. (CN) | 2016-12-14 | — | — | CN | disclosed |
| CN-102956466-B | Fin-shaped transistor and manufacturing method thereof | 联华电子股份有限公司 | 2016-11-16 | — | — | CN | disclosed |
| CN-103881119-B | A kind of preparation method of PVDF base Organic Iron electric polymer nanotube | 中国科学院上海技术物理研究所 | 2016-09-28 | — | — | CN | disclosed |
| US-20150171183-A1 | SEMICONDUCTOR FERROELECTRIC STORAGE TRANSISTOR AND METHOD FOR MANUFACTURING SAME | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2015-06-18 | — | — | US | disclosed |
| CN-104471702-A | Semiconductor ferroelectric memory transistor and method of manufacturing the same | NAT INST OF ADVANCED IND SCIEN | 2015-03-25 | — | — | CN | disclosed |
| CN-103881119-A | Method for preparing polyvinylidene fluoride (PVDF)-based organic ferroelectric polymer nanotube | SHANGHAI TECH PHYSICS INST | 2014-06-25 | — | — | CN | disclosed |