⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29403228 | 1.00 | — | — | |
| SCHEMBL29474233 | 1.00 | — | — | |
| SCHEMBL30525357 | 1.00 | — | — | |
| SCHEMBL6509945 | 0.87 | — | — | |
| Lithium Ion SCHEMBL2490448 | 0.87 | — | — | |
| SCHEMBL5088054 | 0.87 | — | — | |
| SCHEMBL3128128 | 0.87 | — | — | |
| SCHEMBL1981104 | 0.87 | — | — | |
| SCHEMBL9998309 | 0.82 | — | — | |
| SCHEMBL5193510 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 148 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260114167-A1 | ANTI-REFLECTIVE FILM AND DISPLAY DEVICE INCLUDING THE SAME | SAMSUNG DISPLAY CO LTD (KR) | 2026-04-23 | — | — | US | claimed |
| CN-114678587-B | Preparation method of solid electrolyte, lanthanum titanium oxide compound and preparation method thereof | 湖州南木纳米科技有限公司 | 2025-02-18 | — | — | CN | claimed |
| WO-2024250154-A1 | CERAMIC MEMBRANE ELECTROLYTIC BATH FOR EXTRACTING LITHIUM FROM SALT LAKE BY MEANS OF ELECTRICAL DE-INTERCALATION, AND ELECTROLYSIS DEVICE AND METHOD FOR EXTRACTING LITHIUM FROM SALT LAKE BY MEANS OF ELECTRICAL DE-INTERCALATION | 广东邦普循环科技有限公司 | 2024-12-12 | — | — | WO | claimed |
| CN-118666579-A | Preparation method for improving strain performance of potassium sodium niobate ferroelectric ceramic by doping lanthanum oxide | 池州学院 | 2024-09-20 | — | — | CN | claimed |
| US-12046686-B2 | Optical filter structure for arbitrary combination of RGB and IR wavelength ranges and its manufacturing method | KINGRAY TECH CO LTD (TW) | 2024-07-23 | — | — | US | claimed |
| US-12034020-B2 | CVD preparation method for minimizing camera module dot defects and product thereof | HANGZHOU MDK OPTO ELECTRONICS CO., LTD (CN) | 2024-07-09 | — | — | US | claimed |
| US-11840764-B2 | Laminate and method for preparing the same | HYUNDAI MOBIS CO., LTD. (KR) | 2023-12-12 | — | — | US | claimed |
| CN-117043365-A | Ceramic membrane electrolytic tank for extracting lithium from electrodecladding salt lake and electrolytic device and method for extracting lithium from electrodecladding salt lake | 广东邦普循环科技有限公司 | 2023-11-10 | — | — | CN | claimed |
| US-11804501-B2 | ALD preparation method for eliminating camera module dot defects and product thereof | HANGZHOU MDK OPTO ELECTRONICS CO., LTD (CN) | 2023-10-31 | — | — | US | claimed |
| US-20230335652-A1 | OPTICAL FILTER STRUCTURE FOR ARBITRARY COMBINATION OF RGB AND IR WAVELENGTH RANGES AND ITS MANUFACTURING METHOD | Kingray technology Co., Ltd. (TW) | 2023-10-19 | — | — | US | claimed |
| EP-2743946-A2 | Use of Material, Especially an Eutectic One, as an Active Layer in an Electrode and an Electrode Comprising an Active Layer of Material, Especially an Eutectic One | Instytut Technologii Materialów Elektronicznych (PL) | 2014-06-18 | — | — | EP | claimed |
| US-7803682-B2 | Semiconductor memory device and method for manufacturing same | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-09-28 | — | — | US | claimed |
| US-7723714-B2 | Programmable-resistance memory cell | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-05-25 | — | — | US | claimed |
| CN-100568532-C | Memory cell and manufacture method thereof | IBM (US) | 2009-12-09 | — | — | CN | claimed |
| US-20080149911-A1 | PROGRAMMABLE-RESISTANCE MEMORY CELL | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-06-26 | — | — | US | claimed |
| CN-101207152-A | Memory cell and manufacturing method thereof | IBM (US) | 2008-06-25 | — | — | CN | claimed |
| US-20080054341-A1 | Semiconductor memory device and method for manufacturing same | KABUSHIKI KAISHA TOSHIBA (JP) | 2008-03-06 | — | — | US | claimed |
| US-20080011996-A1 | MULTI-LAYER DEVICE WITH SWITCHABLE RESISTANCE | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2008-01-17 | — | — | US | claimed |
| US-7193294-B2 | Semiconductor substrate comprising a support substrate which comprises a gettering site | TOSHIBA CERAMICS CO., LTD. (JP) | 2007-03-20 | — | — | US | claimed |
| US-20060118868-A1 | A semiconductor substrate comprising a support substrate which comprises a gettering site | TOSHIBA CERAMICS CO., LTD. | 2006-06-08 | — | — | US | claimed |