Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4650614 | 0.87 | — | — | |
| SCHEMBL29403228 | 0.87 | — | — | |
| SCHEMBL29637678 | 0.87 | — | — | |
| SCHEMBL16681692 | 0.87 | — | — | |
| SCHEMBL4817502 | 0.87 | — | — | |
| SCHEMBL30525357 | 0.87 | — | — | |
| SCHEMBL29474233 | 0.87 | — | — | |
| SCHEMBL1310370 | 0.87 | — | — | |
| SCHEMBL1116072 | 0.87 | — | — | |
| SCHEMBL1981104 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20100123176-A1 | SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-05-20 | — | — | US | claimed |
| US-20220328651-A1 | Semiconducting Ferroelectric Device with Silicon Doped Electrode | CERFE LABS, INC. | 2022-10-13 | — | — | US | disclosed |
| WO-2022197706-A2 | SEMICONDUCTING FERROELECTRIC DEVICE | CERFE LABS, INC. (US) | 2022-09-22 | — | — | WO | disclosed |
| US-20220293766-A1 | Semiconducting Ferroelectric Device | CERFE LABS, INC. | 2022-09-15 | — | — | US | disclosed |
| CN-109037317-B | Ferroelectric memory device | 爱思开海力士有限公司 | 2021-09-10 | — | — | CN | disclosed |
| US-10475924-B2 | Ferroelectric memory devices | SK Hynix Inc. (KR) | 2019-11-12 | — | — | US | disclosed |
| US-10374011-B2 | Resistance change memory devices | SK Hynix Inc. (KR) | 2019-08-06 | — | — | US | disclosed |
| US-20180358410-A1 | RESISTANCE CHANGE MEMORY DEVICES | SK Hynix Inc. (KR) | 2018-12-13 | — | — | US | disclosed |
| US-20180358471-A1 | FERROELECTRIC MEMORY DEVICES | SK Hynix Inc. (KR) | 2018-12-13 | — | — | US | disclosed |
| US-20070062414-A1 | Coating solutions for use in forming bismuth-based ferroelectric thin films and a method of forming bismuth-based ferroelectric thin films using the coating solutions | SATO YOSHIMI | 2007-03-22 | — | — | US | disclosed |
| US-6785119-B2 | Ferroelectric capacitor and process for its manufacture | INFINEON TECHNOLOGIES AG (DE) | 2004-08-31 | — | — | US | disclosed |
| US-6773979-B2 | Method for fabricating semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2004-08-10 | — | — | US | disclosed |
| WO-2004053949-A1 | FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE | INFINEON TECHNOLOGIES AG (DE) | 2004-06-24 | — | — | WO | disclosed |
| WO-2004051711-A2 | FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE | INFINEON TECHNOLOGIES AG (DE) | 2004-06-17 | — | — | WO | disclosed |
| US-20040109280-A1 | Ferroelectric capacitor and process for its manufacture | QIMONDA AG (DE) | 2004-06-10 | — | — | US | disclosed |
| US-20040105213-A1 | Ferroelectric capacitor and process for its manufacture | QIMONDA AG (DE) | 2004-06-03 | — | — | US | disclosed |
| US-20040055509-A1 | Coating solutions for use in forming bismuth-based ferroelectric thin films and a method of forming bismuth-based ferroelectric thin films using the coating solutions | SATO YOSHIMI (JP) | 2004-03-25 | — | — | US | disclosed |
| US-20040051126-A1 | Compositionally engineered CexMnyO3 and semiconductor devices based thereon | STRUCTURED MATERIALS INC. | 2004-03-18 | — | — | US | disclosed |
| US-20020106816-A1 | Method for fabricating semiconductor device | PANNOVA SEMIC, LLC | 2002-08-08 | — | — | US | disclosed |
| US-20010022990-A1 | Coating solutions for use in forming bismuth-based ferroelectric thin films and a method of forming bismuth-based ferroelectric thin films using the coating solutions | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-09-20 | — | — | US | disclosed |