SCHEMBL13201520

SCHEMBL13201520

CCC(C)(C)C(=O)OC1CC2CC1C(O)C2O

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HMGCR P04035 5/20 0.33
CYP3A4 P08684 3/20 0.33
USP2 O75604 2/20 0.33
ALDH1A1 P00352 2/20 0.33
TSHR P16473 2/20 0.33
SLCO1B1 Q9Y6L6 2/20 0.33
KDM4E B2RXH2 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
NR1I2 O75469 1/20 0.33
ABCB11 O95342 1/20 0.33
NR3C1 P04150 1/20 0.33
PGR P06401 1/20 0.33
ABCB1 P08183 1/20 0.33
ADORA3 P0DMS8 1/20 0.33
CYP2C8 P10632 1/20 0.33
CHRM1 P11229 1/20 0.33
ADRB3 P13945 1/20 0.33
GABRA1 P14867 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14527270 0.82
SCHEMBL13829323 0.82 CYP3A4 (0.31) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL13563624 0.82 CYP3A4 (0.34) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL13201527 0.81 CYP3A4 (0.31) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL15113766 0.80 SLCO1B1 (0.32) CYP3A4USP2ALDH1A1SLCO1B1KDM4E
SCHEMBL13829218 0.79 HMGCR (0.35) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL47558 0.79 MAPT (0.49) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL17853836 0.79 CYP3A4 (0.30) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL17853835 0.79 CYP3A4 (0.30) HMGCRCYP3A4USP2ALDH1A1TSHR
SCHEMBL14802431 0.79 SLCO1B1 (0.32) HMGCRCYP3A4USP2ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8808965-B2 Pattern forming method, pattern, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-20120288691-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-15 US disclosed
US-7771913-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-10 US disclosed
US-7642034-B2 Photoresists; (meth)acrylate fluoropolymer which is insoluble in water, dissolvable in aqueous alkaline solution, and immiscible with resist films so that it enables pattern formation by the immersion lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-05 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed