⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28084 | 0.82 | — | — | |
| SCHEMBL6931147 | 0.82 | — | — | |
| SCHEMBL30549558 | 0.82 | — | — | |
| SCHEMBL141291 | 0.82 | — | — | |
| SCHEMBL7170381 | 0.82 | — | — | |
| SCHEMBL1445932 | 0.82 | — | — | |
| SCHEMBL237963 | 0.67 | — | — | |
| SCHEMBL20499797 | 0.67 | — | — | |
| SCHEMBL17312032 | 0.67 | — | — | |
| SCHEMBL22261822 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240072104-A1 | METHOD AND SYSTEMS FOR FORMING DEVICE STRUCTURES INCLUDING HIGH-K DIELECTRIC LAYERS AND RELATED DEVICE STRUCTURES | ASM IP HOLDING B.V. (NL) | 2024-02-29 | — | — | US | claimed |
| EP-2857193-B1 | CERAMIC MATRIX COMPOSITE COMPONENT COATED WITH ENVIRONMENTAL BARRIER COATINGS AND METHOD OF MANUFACTURING THE SAME | IHI CORP (JP) | 2019-02-20 | — | — | EP | claimed |
| US-9601388-B2 | Integrated high-K/metal gate in CMOS process flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2017-03-21 | — | — | US | claimed |
| US-20160293490-A1 | Integrated High-K/Metal Gate in CMOS Process Flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-10-06 | — | — | US | claimed |
| EP-2857193-A1 | ENVIRONMENTAL BARRIER COATED CERAMIC MATRIX COMPOSITE COMPONENT AND METHOD FOR MANUFACTURING SAME | IHI Corporation (JP) | 2015-04-08 | — | — | EP | claimed |
| US-20150079371-A1 | CERAMIC MATRIX COMPOSITE COMPONENT COATED WITH ENVIRONMENTAL BARRIER COATINGS AND METHOD OF MANUFACTURING THE SAME | IHI CORPORATION (JP) | 2015-03-19 | — | — | US | claimed |
| CN-104379345-A | Environmental barrier coated ceramic matrix composite component and method for manufacturing same | IHI CORP | 2015-02-25 | — | — | CN | claimed |
| US-20100041223-A1 | METHOD OF INTEGRATING HIGH-K/METAL GATE IN CMOS PROCESS FLOW | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2010-02-18 | — | — | US | claimed |
| US-20240072104-A1 | METHOD AND SYSTEMS FOR FORMING DEVICE STRUCTURES INCLUDING HIGH-K DIELECTRIC LAYERS AND RELATED DEVICE STRUCTURES | ASM IP HOLDING B.V. (NL) | 2024-02-29 | — | — | US | disclosed |
| EP-2857193-B1 | CERAMIC MATRIX COMPOSITE COMPONENT COATED WITH ENVIRONMENTAL BARRIER COATINGS AND METHOD OF MANUFACTURING THE SAME | IHI CORP (JP) | 2019-02-20 | — | — | EP | disclosed |
| US-20170162570-A1 | Complementary Transistor Pair Comprising Field Effect Transistor Having Metal Oxide Channel Layer | Advanced Device Research Inc. (TW) | 2017-06-08 | — | — | US | disclosed |
| US-9601388-B2 | Integrated high-K/metal gate in CMOS process flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2017-03-21 | — | — | US | disclosed |
| US-20160293490-A1 | Integrated High-K/Metal Gate in CMOS Process Flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-10-06 | — | — | US | disclosed |
| US-9257426-B2 | Integrated high-k/metal gate in CMOS process flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-02-09 | — | — | US | disclosed |
| US-8841731-B2 | Integrated high-k/metal gate in CMOS process flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-09-23 | — | — | US | disclosed |
| US-20130140643-A1 | INTEGRATED HIGH-K/METAL GATE IN CMOS PROCESS FLOW | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-06-06 | — | — | US | disclosed |
| US-8383502-B2 | Integrated high-K/metal gate in CMOS process flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-02-26 | — | — | US | disclosed |
| US-20110275212-A1 | Integrated High-K/Metal Gate in CMOS Process Flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2011-11-10 | — | — | US | disclosed |
| US-8003507-B2 | Method of integrating high-K/metal gate in CMOS process flow | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2011-08-23 | — | — | US | disclosed |
| US-20100041223-A1 | METHOD OF INTEGRATING HIGH-K/METAL GATE IN CMOS PROCESS FLOW | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2010-02-18 | — | — | US | disclosed |