SCHEMBL132223

SCHEMBL132223

CCCCCCCCOc1c(F)c(F)c(S(=O)(=O)O)c(F)c1F

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
S1PR3 Q99500 1/20 0.42
RECQL P46063 2/20 0.40
TSHR P16473 2/20 0.40
GLA P06280 1/20 0.40
HPGD P15428 1/20 0.40
MAPK1 P28482 1/20 0.40
EPHX2 P34913 1/20 0.40
BLM P54132 1/20 0.40
THRA P10827 3/20 0.39
THRB P10828 3/20 0.39
NR5A1 Q13285 1/20 0.38
PLA2G2A P14555 1/20 0.37
TP53 P04637 1/20 0.37
CA1 P00915 5/20 0.37
CA2 P00918 5/20 0.37
CA9 Q16790 5/20 0.37
LPAR3 Q9UBY5 3/20 0.37
LPAR1 Q92633 2/20 0.37
LPAR2 Q9HBW0 2/20 0.37
CA12 O43570 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2757707 1.00 S1PR3 (0.42) S1PR3RECQLTSHRGLAHPGD
SCHEMBL683694 1.00 S1PR3 (0.42) S1PR3RECQLTSHRGLAHPGD
SCHEMBL111792 1.00 S1PR3 (0.42) S1PR3RECQLTSHRGLAHPGD
SCHEMBL2757705 1.00 S1PR3 (0.42) S1PR3RECQLTSHRGLAHPGD
SCHEMBL3007105 0.98 S1PR3 (0.41) S1PR3RECQLTSHRGLAHPGD
SCHEMBL12203391 0.94 S1PR3 (0.40) S1PR3RECQLTSHRGLAHPGD
SCHEMBL14278399 0.93 CA1 (0.38) S1PR3TSHRTHRATHRBCA1
SCHEMBL13243400 0.87 S1PR3 (0.36) S1PR3RECQLTSHRGLAHPGD
SCHEMBL18594482 0.85 ESR1 (0.40) S1PR3RECQLTSHRGLAHPGD
SCHEMBL10087725 0.85 S1PR3 (0.39) S1PR3RECQLTSHRGLAHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9052594-B2 Positive photosensitive composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-20120058431-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-03-08 US disclosed
US-7632623-B2 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2009-12-15 US disclosed
US-7442490-B2 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2008-10-28 US disclosed
US-20070218405-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-09-20 US disclosed