Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | S1PR3 | Q99500 | 1/20 | 0.42 |
| ▸ | RECQL | P46063 | 2/20 | 0.40 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | GLA | P06280 | 1/20 | 0.40 |
| ▸ | HPGD | P15428 | 1/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.40 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.40 |
| ▸ | BLM | P54132 | 1/20 | 0.40 |
| ▸ | THRA | P10827 | 3/20 | 0.39 |
| ▸ | THRB | P10828 | 3/20 | 0.39 |
| ▸ | NR5A1 | Q13285 | 1/20 | 0.38 |
| ▸ | PLA2G2A | P14555 | 1/20 | 0.37 |
| ▸ | TP53 | P04637 | 1/20 | 0.37 |
| ▸ | CA1 | P00915 | 5/20 | 0.37 |
| ▸ | CA2 | P00918 | 5/20 | 0.37 |
| ▸ | CA9 | Q16790 | 5/20 | 0.37 |
| ▸ | LPAR3 | Q9UBY5 | 3/20 | 0.37 |
| ▸ | LPAR1 | Q92633 | 2/20 | 0.37 |
| ▸ | LPAR2 | Q9HBW0 | 2/20 | 0.37 |
| ▸ | CA12 | O43570 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2757707 | 1.00 | S1PR3 (0.42) | S1PR3RECQLTSHRGLAHPGD | |
| SCHEMBL111792 | 1.00 | S1PR3 (0.42) | S1PR3RECQLTSHRGLAHPGD | |
| SCHEMBL2757705 | 1.00 | S1PR3 (0.42) | S1PR3RECQLTSHRGLAHPGD | |
| SCHEMBL132223 | 1.00 | S1PR3 (0.42) | S1PR3RECQLTSHRGLAHPGD | |
| SCHEMBL3007105 | 0.98 | S1PR3 (0.41) | S1PR3RECQLTSHRGLAHPGD | |
| SCHEMBL12203391 | 0.94 | S1PR3 (0.40) | S1PR3RECQLTSHRGLAHPGD | |
| SCHEMBL14278399 | 0.93 | CA1 (0.38) | S1PR3TSHRTHRATHRBCA1 | |
| SCHEMBL13243400 | 0.87 | S1PR3 (0.36) | S1PR3RECQLTSHRGLAHPGD | |
| SCHEMBL18594482 | 0.85 | ESR1 (0.40) | S1PR3RECQLTSHRGLAHPGD | |
| SCHEMBL10087725 | 0.85 | S1PR3 (0.39) | S1PR3RECQLTSHRGLAHPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 353 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10031419-B2 | Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device | FUJIFILM CORPORATION (JP) | 2018-07-24 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9829796-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-28 | — | — | US | disclosed |
| US-9829796-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-28 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20120003591-A1 | METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20120003586-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-20110287234-A1 | NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN | FUJIFILM CORPORATION (JP) | 2011-11-24 | — | — | US | disclosed |
| US-7695892-B2 | Resist composition and pattern-forming method using same | FUJIFILM CORPORATION (JP) | 2010-04-13 | — | — | US | disclosed |
| US-20080241737-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| EP-1972641-A2 | Resist composition and pattern-forming method using same | FUJIFILM Corporation (JP) | 2008-09-24 | — | — | EP | disclosed |
| US-7323286-B2 | Photosensitive composition, compound used in the same, and patterning method using the same | FUJIFILM CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| EP-1835343-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM Corporation (JP) | 2007-09-19 | — | — | EP | disclosed |
| EP-1835340-A1 | Positive resist composition and pattern formation method using the positive resist composition | FUJIFILM Corporation (JP) | 2007-09-19 | — | — | EP | disclosed |