Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4581130 | 0.81 | — | — | |
| SCHEMBL28455706 | 0.79 | MEN1 (0.48) | — | |
| SCHEMBL16005383 | 0.79 | MEN1 (0.48) | — | |
| SCHEMBL16005406 | 0.79 | MEN1 (0.48) | — | |
| SCHEMBL2955801 | 0.79 | MEN1 (0.48) | — | |
| SCHEMBL16005286 | 0.79 | MEN1 (0.48) | — | |
| SCHEMBL14801943 | 0.79 | MEN1 (0.48) | — | |
| SCHEMBL6554079 | 0.79 | MEN1 (0.48) | — | |
| SCHEMBL16005391 | 0.79 | MEN1 (0.48) | — | |
| SCHEMBL16005645 | 0.79 | MEN1 (0.48) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 78 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113788905-B | Stepwise preparation method of graphene/nano silicon dioxide/polyvinyl chloride resin | 杭州电化集团有限公司 | 2022-09-09 | — | — | CN | claimed |
| CN-113788905-A | Distribution preparation method of graphene/nano silicon dioxide/polyvinyl chloride resin | 杭州电化集团有限公司 | 2021-12-14 | — | — | CN | claimed |
| CN-111363071-B | Preparation method of graphene/nano silicon dioxide/polyvinyl chloride resin | 杭州电化集团有限公司 | 2021-10-08 | — | — | CN | claimed |
| CN-111363071-A | Preparation method of graphene/nano silicon dioxide/polyvinyl chloride resin | 杭州电化集团有限公司 | 2020-07-03 | — | — | CN | claimed |
| CN-107011191-B | Produce N, the method for N- dimethyldiglycolamine co-production N, N- dimethylethanolamine | 浙江大学 | 2019-02-19 | — | — | CN | claimed |
| CN-106748831-B | The synthetic method of N, N- dimethyldiglycolamine | 四川之江高新材料股份有限公司 | 2018-05-29 | — | — | CN | claimed |
| CN-107011191-A | Produce N, the method for N dimethyldiglycolamine co-production N, N dimethylethanolamines | 浙江大学 | 2017-08-04 | — | — | CN | claimed |
| CN-106748831-A | The synthetic method of N, N dimethyldiglycolamine | 四川之江高新材料股份有限公司 | 2017-05-31 | — | — | CN | claimed |
| US-20130109605-A1 | COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2013-05-02 | — | — | US | claimed |
| US-8338087-B2 | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate | ADVANCED TECHNOLOGY MATERIALS, INC (US) | 2012-12-25 | — | — | US | claimed |
| EP-1891482-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2008-02-27 | — | — | EP | claimed |
| WO-2007047365-A2 | METALS COMPATIBLE PHOTORESIST AND/OR SACRIFICIAL ANTIREFLECTIVE COATING REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-04-26 | — | — | WO | claimed |
| WO-2007044447-A2 | COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-04-19 | — | — | WO | claimed |
| WO-2007044446-A1 | OXIDIZING AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-04-19 | — | — | WO | claimed |
| WO-2007027522-A2 | COMPOSITION AND METHOD FOR REMOVING THICK FILM PHOTORESIST | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2007-03-08 | — | — | WO | claimed |
| WO-2006133253-A1 | METAL AND DIELECTRIC COMPATIBLE SACRIFICIAL ANTI-REFLECTIVE COATING CLEANING AND REMOVAL COMPOSITION | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-12-14 | — | — | WO | claimed |
| EP-1730600-A1 | COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE | Advanced Technology Materials, Inc. (US) | 2006-12-13 | — | — | EP | claimed |
| WO-2006110645-A2 | FLUORIDE LIQUID CLEANERS WITH POLAR AND NON-POLAR SOLVENT MIXTURES FOR CLEANING LOW-K-CONTAINING MICROELECTRONIC DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-10-19 | — | — | WO | claimed |
| WO-2005085957-A1 | COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2005-09-15 | — | — | WO | claimed |
| US-20050197265-A1 | Composition including an active cleaning combination selected from a quaternary ammonium base in combination with at least one of alkali and alkaline earth base and a strong base in combination with an oxidant; semiconductors | TRUIST BANK, AS NOTES COLLATERAL AGENT | 2005-09-08 | — | — | US | claimed |