SCHEMBL133289

SCHEMBL133289

CC(C)(C)OC(=O)OC12CC3CC(C1)CC(C(=O)OC(C)(C)C)(C3)C2

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 3/20 0.38
CYP19A1 P11511 3/20 0.38
NPSR1 Q6W5P4 1/20 0.38
MEN1 O00255 1/20 0.35
MAPK1 P28482 1/20 0.35
KMT2A Q03164 1/20 0.35
EPHX2 P34913 1/20 0.33
SCN1A P35498 1/20 0.33
SCN2A Q99250 1/20 0.33
SCN3A Q9NY46 1/20 0.33
ALDH1A1 P00352 2/20 0.32
THRB P10828 1/20 0.32
HSD11B1 P28845 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15908879 0.92 CYP17A1 (0.36) CYP17A1CYP19A1NPSR1MEN1MAPK1
SCHEMBL136663 0.84 NPSR1 (0.49) CYP17A1CYP19A1NPSR1MEN1MAPK1
SCHEMBL14871113 0.84 NPSR1 (0.44) NPSR1MEN1KMT2AEPHX2ALDH1A1
SCHEMBL1143543 0.83 CYP17A1 (0.35) CYP17A1CYP19A1NPSR1MEN1MAPK1
SCHEMBL1733328 0.83 CYP17A1 (0.35) CYP17A1CYP19A1NPSR1MEN1MAPK1
SCHEMBL107130 0.82 NPSR1 (0.36) CYP17A1CYP19A1NPSR1MEN1MAPK1
SCHEMBL6105710 0.80 CYP17A1 (0.33) CYP17A1CYP19A1NPSR1MEN1MAPK1
SCHEMBL16263425 0.80 NPSR1 (0.38) CYP17A1CYP19A1NPSR1MEN1KMT2A
SCHEMBL5195169 0.80 CYP17A1 (0.39) CYP17A1CYP19A1NPSR1MEN1MAPK1
SCHEMBL12603694 0.79 MEN1 (0.35) CYP17A1CYP19A1NPSR1MEN1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 362 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
US-9835945-B2 Positive resist composition and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2017-12-05 US disclosed
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 US disclosed
US-9829796-B2 Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2017-11-28 US disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9798235-B2 Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same FUJIFILM CORPORATION (JP) 2017-10-24 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9766547-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device FUJIFILM CORPORATION (JP) 2017-09-19 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-20070077519-A1 Pattern forming method and resist composition used therefor FUJI PHOTO FILM CO., LTD. 2007-04-05 US disclosed
US-20070072118-A1 Positive photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-20070065752-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-22 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-20070054217-A1 Positive photosensitive composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-20070031757-A1 Positive photosensitive composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-02-08 US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed
US-20070003871-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-01-04 US disclosed