SCHEMBL1334366

SCHEMBL1334366

Cc1ccc(O)cc1C(=O)O

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 4/20 0.61
CA1 P00915 4/20 0.61
CA2 P00918 4/20 0.61
CA7 P43166 4/20 0.61
CA9 Q16790 4/20 0.61
CA14 Q9ULX7 4/20 0.61
ALOX5 P09917 1/20 0.61
PTGS2 P35354 1/20 0.61
MYC P01106 1/20 0.56
PTPN1 P18031 1/20 0.56
ALDH1A1 P00352 4/20 0.56
MEN1 O00255 3/20 0.56
MAPT P10636 3/20 0.56
KMT2A Q03164 3/20 0.56
TDP1 Q9NUW8 2/20 0.56
TSHR P16473 1/20 0.56
LMNA P02545 1/20 0.56
RAB9A P51151 1/20 0.56
HSD17B10 Q99714 2/20 0.53
HTT P42858 2/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30344092 1.00 CA12 (0.61) CA12CA1CA2CA7CA9
Hydrochloric Acid SCHEMBL18861034 0.98 CA12 (0.59) CA12CA1CA2CA7CA9
SCHEMBL10024268 0.84 MCL1 (0.61) KMT2AHSD17B10MCL1KDM4EESR2
SCHEMBL9216747 0.82 HSD17B1 (0.47) CA12CA1CA2CA7CA9
SCHEMBL39526 0.82 CA12 (0.61) CA12CA1CA2CA7CA9
SCHEMBL27500611 0.80 CA12 (0.59) CA12CA1CA2CA7CA9
SCHEMBL18861032 0.80 CA12 (0.43) CA12CA1CA2CA7CA9
SCHEMBL4950195 0.80 TDP1 (0.47) CA12CA1CA2CA7CA9
SCHEMBL27659033 0.80 CA12 (0.59) CA12CA1CA2CA7CA9
Hydroquinone SCHEMBL9845304 0.80 CA12 (0.59) CA12CA1CA2CA7CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 339 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230350293-A1 I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN YOUNG CHANG CHEMICAL CO., LTD (KR) 2023-11-02 US claimed
CN-116836081-A Ether epoxy toughening agent and preparation method and application thereof 中国林业科学研究院林产化学工业研究所 2023-10-03 CN claimed
EP-4220301-A1 I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN Young Chang Chemical Co., Ltd. (KR) 2023-08-02 EP claimed
CN-116194842-A Negative photoresist composition for I-line for improving step difference and LER between center and edge, and negative photoresist composition for I-line for improving process margin 荣昌化学制品株式会社 2023-05-30 CN claimed
US-11586109-B2 Chemically-amplified-type negative-type photoresist composition YOUNG CHANG CHEMICAL CO., LTD (KR) 2023-02-21 US claimed
CN-109154776-B Chemically amplified negative photoresist composition 荣昌化学制品株式会社 2022-06-28 CN claimed
EP-3435160-B1 NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO YOUNG CHANG CHEMICAL CO LTD (KR) 2022-05-04 EP claimed
WO-2022065713-A1 I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN 영창케미칼 주식회사 2022-03-31 WO claimed
CN-109073973-B Negative photoresist composition for KrF laser with high resolution and high aspect ratio 荣昌化学制品株式会社 2021-09-28 CN claimed
CN-107850841-B Negative photoresist composition for KrF laser for forming semiconductor pattern 荣昌化学制品株式会社 2021-04-02 CN claimed
EP-3435160-A1 NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO Young Chang Chemical Co., Ltd. (KR) 2019-01-30 EP claimed
CN-109154776-A Chemical amplifying type negative photoresist composition 荣昌化学制品株式会社 2019-01-04 CN claimed
US-10162261-B2 Negative photoresist composition for KrF laser for forming semiconductor patterns YOUNG CHANG CHEMICAL CO., LTD (KR) 2018-12-25 US claimed
CN-109073973-A KrF laser negative photoresist composition with high-resolution and high aspect ratio 荣昌化学制品株式会社 2018-12-21 CN claimed
US-20180246404-A1 I-LINE NEGATIVE TYPE PHOTORESIST COMPOSITION HAVING EXCELLENT ETCHING RESISTANCE YCCHEM CO., LTD. (KR) 2018-08-30 US claimed
US-20180203351-A1 NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER FOR FORMING SEMICONDUCTOR PATTERNS YCCHEM CO., LTD. (KR) 2018-07-19 US claimed
CN-107924124-A Negative photoresist composition for I-line with excellent etching resistance 荣昌化学制品株式会社 2018-04-17 CN claimed
CN-107850841-A Negative photoresist composition for KrF laser for forming semiconductor pattern 荣昌化学制品株式会社 2018-03-27 CN claimed
US-20110281115-A1 CURABLE FILM-FORMING COMPOSITIONS CONTAINING ORTHO-HYDROXYL AROMATIC FUNCTIONAL ACRYLIC POLYMERS PPG INDUSTRIES OHIO, INC. 2011-11-17 US claimed
CN-102190585-A Synthesis method of high-purity methyl 5-hydroxy-2-methyl benzoate WUXI APPTEC CO LTD 2011-09-21 CN claimed