⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10939594 | 1.00 | — | — | |
| SCHEMBL8836640 | 0.87 | — | — | |
| SCHEMBL29500945 | 0.87 | — | — | |
| SCHEMBL306463 | 0.87 | — | — | |
| SCHEMBL5017446 | 0.87 | — | — | |
| SCHEMBL2143588 | 0.82 | — | — | |
| SCHEMBL152866 | 0.82 | — | — | |
| SCHEMBL29379185 | 0.82 | — | — | |
| SCHEMBL2196496 | 0.82 | — | — | |
| SCHEMBL4953254 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 355 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4560731-A1 | POSITIVE ELECTRODE ACTIVE MATERIAL AND PREPARATION METHOD THEREFOR, POSITIVE ELECTRODE PLATE, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRIC DEVICE | CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED (HK) | 2025-05-28 | — | — | EP | claimed |
| US-20250118737-A1 | POSITIVE ELECTRODE ACTIVE MATERIAL AND PREPARATION METHOD THEREFOR, POSITIVE ELECTRODE PLATE, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK AND POWER CONSUMING DEVICE | CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED (CN) | 2025-04-10 | — | — | US | claimed |
| CN-118489168-A | Positive electrode active material, preparation method thereof, positive electrode plate, secondary battery, battery module, battery pack and power utilization device | 宁德时代新能源科技股份有限公司 | 2024-08-13 | — | — | CN | claimed |
| WO-2024156770-A1 | PLATING BATH COMPOSITION FOR PLATING OF PRECIOUS METAL AND A METHOD FOR DEPOSITING A PRECIOUS METAL LAYER | Atotech Deutschland GmbH & Co. KG (DE) | 2024-08-02 | — | — | WO | claimed |
| EP-4407067-A1 | PLATING BATH COMPOSITION FOR PLATING OF PRECIOUS METAL AND A METHOD FOR DEPOSITING A PRECIOUS METAL LAYER | Atotech Deutschland GmbH & Co. KG (DE) | 2024-07-31 | — | — | EP | claimed |
| CN-113555341-B | Semiconductor element with air gap | 南亚科技股份有限公司 | 2024-05-24 | — | — | CN | claimed |
| WO-2024065157-A1 | POSITIVE ELECTRODE ACTIVE MATERIAL AND PREPARATION METHOD THEREFOR, POSITIVE ELECTRODE PLATE, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRIC DEVICE | 宁德时代新能源科技股份有限公司 | 2024-04-04 | — | — | WO | claimed |
| US-11935784-B2 | Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same | SANDISK TECHNOLOGIES LLC (US) | 2024-03-19 | — | — | US | claimed |
| CN-116918064-A | Three-dimensional memory device including self-aligned bit line contacts and method of forming the same | 桑迪士克科技有限责任公司 | 2023-10-20 | — | — | CN | claimed |
| US-11621188-B2 | Method for fabricating a semiconductor device with air gaps | NANYA TECHNOLOGY CORPORATION (TW) | 2023-04-04 | — | — | US | claimed |
| US-8062955-B2 | Substrate processing method and substrate processing apparatus | TOKYO ELECTRON LIMITED (JP) | 2011-11-22 | — | — | US | claimed |
| US-7741228-B2 | Method for fabricating semiconductor device | PANASONIC CORPORATION (JP) | 2010-06-22 | — | — | US | claimed |
| US-20080299763-A1 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | PANASONIC CORPORATION (JP) | 2008-12-04 | — | — | US | claimed |
| US-20080280437-A1 | Substrate Processing Method and Substrate Processing Apparatus | TOKYO ELECTRON LIMITED (JP) | 2008-11-13 | — | — | US | claimed |
| US-20080226826-A1 | Apply electroless plating of cobalt tungsten boron alloy onto copper interconnection line on semiconductor substrate; post-cleaning by use of a cleaning liquid before plated surface is dried; prevent oxidation, deterioration of morphology of plated film | TOKYO ELECTON LIMITED (JP) | 2008-09-18 | — | — | US | claimed |
| US-7332764-B2 | Metal-insulator-metal (MIM) capacitor and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-02-19 | — | — | US | claimed |
| US-20070049008-A1 | Method for forming a capping layer on a semiconductor device | FREESCALE SEMICONDUCTOR, INC. | 2007-03-01 | — | — | US | claimed |
| WO-2007024470-A2 | METHOD FOR FORMING A CAPPING LAYER ON A SEMICONDUCTOR DEVICE | FREESCALE SEMICONDUCTOR (US) | 2007-03-01 | — | — | WO | claimed |
| US-20050275005-A1 | Metal-insulator-metal (MIM) capacitor and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-12-15 | — | — | US | claimed |
| US-4895770-A | VAPOR DEPOSITION OF METAL BORONITRIDE LAYER | SCHWARZKOPF DEVELOPMENT CORPORATION (US) | 1990-01-23 | — | — | US | claimed |