⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phosphine SCHEMBL21381216 | 0.87 | — | — | |
| Phosphine SCHEMBL28901474 | 0.87 | — | — | |
| Phosphine SCHEMBL27463934 | 0.82 | — | — | |
| Phosphine SCHEMBL8731728 | 0.82 | — | — | |
| Phosphine SCHEMBL175803 | 0.82 | — | — | |
| SCHEMBL28836892 | 0.82 | — | — | |
| Phosphine SCHEMBL14991435 | 0.82 | — | — | |
| Phosphine SCHEMBL2704526 | 0.82 | — | — | |
| SCHEMBL62875 | 0.82 | — | — | |
| Phosphine SCHEMBL25270879 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-105785642-A | Display device | 三星显示有限公司 | 2016-07-20 | — | — | CN | claimed |
| CN-110400821-A | Show equipment | INNOLUX CORP | 2019-11-01 | — | — | CN | disclosed |
| CN-110109291-A | Show equipment | 群创光电股份有限公司 | 2019-08-09 | — | — | CN | disclosed |
| CN-110068949-A | Show equipment | 群创光电股份有限公司 | 2019-07-30 | — | — | CN | disclosed |
| US-10266409-B1 | Process for group III-V semiconductor nanostructure synthesis and compositions made using same | NANOSYS, INC. (US) | 2019-04-23 | — | — | US | disclosed |
| CN-108987591-A | display device and illumination device | 群创光电股份有限公司 | 2018-12-11 | — | — | CN | disclosed |
| US-9884763-B1 | Process for group III-V semiconductor nanostructure synthesis and compositions made using same | NANOSYS, INC. (US) | 2018-02-06 | — | — | US | disclosed |
| CN-107219725-A | Photosensitve resin composition, the colored filter and image display device manufactured with it | 东友精细化工有限公司 | 2017-09-29 | — | — | CN | disclosed |
| US-9688534-B1 | Process for group III-V semiconductor nanostructure synthesis and compositions made using same | NANOSYS, INC. (US) | 2017-06-27 | — | — | US | disclosed |
| US-9469538-B1 | Process for group III-IV semiconductor nanostructure synthesis and compositions made using same | NANOSYS, INC. (US) | 2016-10-18 | — | — | US | disclosed |
| CN-105785642-A | Display device | 三星显示有限公司 | 2016-07-20 | — | — | CN | disclosed |
| US-8884273-B1 | Process for group III-V semiconductor nanostructure synthesis and compositions made using same | NANOSYS, INC. (US) | 2014-11-11 | — | — | US | disclosed |
| US-8062967-B1 | Process for group III-V semiconductor nanostructure synthesis and compositions made using same | NANOSYS, INC. (US) | 2011-11-22 | — | — | US | disclosed |
| US-7557028-B1 | For example, making indium phosphide (InP)semiconductors starting from tribenzoyl phosphine and tris-cyclopentadienyl indium; use in photovoltaic devices and light emitting diodes | NANOSYS, INC. (US) | 2009-07-07 | — | — | US | disclosed |
| US-4990465-A | Method of forming a surface emitting laser | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1991-02-05 | — | — | US | disclosed |
| US-4894840-A | Surface emitting laser | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1990-01-16 | — | — | US | disclosed |
| US-4784722-A | Method forming surface emitting diode laser | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1988-11-15 | — | — | US | disclosed |
| US-4718070-A | Surface emitting diode laser | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1988-01-05 | — | — | US | disclosed |
| US-4468850-A | PREFERENTIAL UNDERCUTTING/ETCHING, THEN HEATING TO PRODUCE MIGRATION TO INTERIOR | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 1984-09-04 | — | — | US | disclosed |