Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPBAR1 | Q8TDU6 | 5/20 | 0.80 |
| ▸ | VDR | P11473 | 4/20 | 0.80 |
| ▸ | HIF1A | Q16665 | 3/20 | 0.80 |
| ▸ | CYP2C9 | P11712 | 2/20 | 0.80 |
| ▸ | EPHA2 | P29317 | 4/20 | 0.74 |
| ▸ | CASP7 | P55210 | 3/20 | 0.74 |
| ▸ | TP53 | P04637 | 2/20 | 0.74 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.74 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.74 |
| ▸ | BLM | P54132 | 2/20 | 0.74 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.74 |
| ▸ | USP2 | O75604 | 2/20 | 0.74 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.74 |
| ▸ | MDM4 | O15151 | 1/20 | 0.74 |
| ▸ | MAPT | P10636 | 1/20 | 0.74 |
| ▸ | HSPD1 | P10809 | 1/20 | 0.74 |
| ▸ | TSHR | P16473 | 1/20 | 0.74 |
| ▸ | PTPN2 | P17706 | 1/20 | 0.74 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.74 |
| ▸ | BRCA1 | P38398 | 1/20 | 0.74 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL22871867 | 1.00 | GPBAR1 (0.80) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL18576232 | 1.00 | GPBAR1 (0.80) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL135562 | 1.00 | GPBAR1 (0.80) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL4759767 | 1.00 | GPBAR1 (0.80) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL13655500 | 1.00 | GPBAR1 (0.80) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL18575950 | 1.00 | GPBAR1 (0.80) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL8736943 | 1.00 | GPBAR1 (0.80) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL22871996 | 1.00 | GPBAR1 (0.80) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL16344344 | 0.94 | GPBAR1 (0.73) | GPBAR1VDRHIF1ACYP2C9EPHA2 | |
| SCHEMBL17320299 | 0.94 | GPBAR1 (0.73) | GPBAR1VDRHIF1ACYP2C9EPHA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 785 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1575438-A | Photoacid generators in photoresist compositions for microlithography | DU PONT (US) | 2005-02-02 | — | — | CN | claimed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | claimed |
| CN-1267001-A | Photoetching resin composition contg cyclic olefin polymer and saturated steroid additive | IBM (US) | 2000-09-20 | — | — | CN | claimed |
| CN-113359391-B | Photoresist composition and method for forming photoresist pattern | 台湾积体电路制造股份有限公司 | 2024-09-24 | — | — | CN | disclosed |
| CN-112987515-B | Method of manufacturing semiconductor device and semiconductor device manufacturing tool | 台湾积体电路制造股份有限公司 | 2024-09-06 | — | — | CN | disclosed |
| US-11971659-B2 | Photoresist composition and method of forming photoresist pattern | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-04-30 | — | — | US | disclosed |
| US-11971657-B2 | Photoresist developer and method of developing photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-04-30 | — | — | US | disclosed |
| CN-110955112-B | Photoresist composition and method for forming photoresist pattern | 台湾积体电路制造股份有限公司 | 2024-04-26 | — | — | CN | disclosed |
| US-11966162-B2 | Photoresist composition and method of manufacturing a semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-04-23 | — | — | US | disclosed |
| US-11966160-B2 | Radiation-sensitive resin composition and method for forming pattern | JSR CORPORATION (JP) | 2024-04-23 | — | — | US | disclosed |
| US-20240126170-A1 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND PHOTORESIST COMPOSITION | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-04-18 | — | — | US | disclosed |
| EP-1048983-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 2000-11-02 | — | — | EP | disclosed |
| CN-1267001-A | Photoetching resin composition contg cyclic olefin polymer and saturated steroid additive | IBM (US) | 2000-09-20 | — | — | CN | disclosed |
| US-6093517-A | CONSISTS OF A RADIATION SENSITIVE ACID GENERATOR, A POLYMERIC BINDER AND A DISSOLUTION INHIBITOR CONSISTS OF A CALIX(4)RESORCINARENE PARTIALLY OR WHOLLY PROTECTED WITH ACID-LABILE PROTECTING GROUPS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-07-25 | — | — | US | disclosed |
| WO-2000025178-A2 | PHOTORESISTS AND PROCESSES FOR MICROLITHOGRAPHY | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2000-05-04 | — | — | WO | disclosed |
| WO-2000017712-A1 | PHOTORESISTS, POLYMERS AND PROCESSES FOR MICROLITHOGRAPHY | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2000-03-30 | — | — | WO | disclosed |
| EP-0967522-A1 | Positive photosensitive resin composition | FUJI PHOTO FILM CO., LTD. (JP) | 1999-12-29 | — | — | EP | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| US-5843624-A | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material | LUCENT TECHNOLOGIES INC. (US) | 1998-12-01 | — | — | US | disclosed |
| EP-0794458-A2 | An energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material | LUCENT TECHNOLOGIES INC. (US) | 1997-09-10 | — | — | EP | disclosed |