SCHEMBL8736943

SCHEMBL8736943

CC(CCC(=O)OC(C)(C)C)C1CCC2C3CCC4CC(O)CCC4(C)C3CCC12C

nearest known ligand 0.80

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ GPBAR1 Q8TDU6 5/20 0.80
▸ VDR P11473 4/20 0.80
▸ HIF1A Q16665 3/20 0.80
▸ CYP2C9 P11712 2/20 0.80
▸ EPHA2 P29317 4/20 0.74
▸ CASP7 P55210 3/20 0.74
▸ TP53 P04637 2/20 0.74
▸ MAPK1 P28482 2/20 0.74
▸ HSD17B10 Q99714 2/20 0.74
▸ BLM P54132 2/20 0.74
▸ TDP1 Q9NUW8 2/20 0.74
▸ USP2 O75604 2/20 0.74
▸ CYP3A4 P08684 2/20 0.74
▸ MDM4 O15151 1/20 0.74
▸ MAPT P10636 1/20 0.74
▸ HSPD1 P10809 1/20 0.74
▸ TSHR P16473 1/20 0.74
▸ PTPN2 P17706 1/20 0.74
▸ PTPN1 P18031 1/20 0.74
▸ BRCA1 P38398 1/20 0.74

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22871867 1.00 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL135562 1.00 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL18575950 1.00 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL135561 1.00 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL18576232 1.00 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL13655500 1.00 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL4759767 1.00 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL22871996 1.00 GPBAR1 (0.80) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL19497261 0.94 GPBAR1 (0.73) GPBAR1VDRHIF1ACYP2C9EPHA2
SCHEMBL16344344 0.94 GPBAR1 (0.73) GPBAR1VDRHIF1ACYP2C9EPHA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 48 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2356517-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2017-01-25 — — EP disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 — — US disclosed
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 — — US disclosed
US-9217919-B2 Photosensitive composition, pattern-forming method using the composition, and resin used in the composition FUJIFILM CORPORATION (JP) 2015-12-22 — — US disclosed
US-9217919-B2 Photosensitive composition, pattern-forming method using the composition, and resin used in the composition FUJIFILM CORPORATION (JP) 2015-12-22 — — US disclosed
US-9152048-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 — — US disclosed
US-9152048-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 — — US disclosed
US-9046773-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound FUJIFILM CORPORATION (JP) 2015-06-02 — — US disclosed
US-9046773-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method using the same, polymerizable compound and polymer compound obtained by polymerizing the polymerizable compound FUJIFILM CORPORATION (JP) 2015-06-02 — — US disclosed
US-8975002-B2 Positive resist composition for immersion exposure and pattern forming method FUJIFILM CORPORATION (JP) 2015-03-10 — — US disclosed
WO-2010114107-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-10-07 — — WO disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 — — US disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 — — US disclosed
WO-2010067898-A2 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-06-17 — — WO disclosed
WO-2010067905-A2 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-06-17 — — WO disclosed
US-7695892-B2 Resist composition and pattern-forming method using same FUJIFILM CORPORATION (JP) 2010-04-13 — — US disclosed
US-7695892-B2 Resist composition and pattern-forming method using same FUJIFILM CORPORATION (JP) 2010-04-13 — — US disclosed
US-20090246695-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD USING THE SAME, POLYMERIZABLE COMPOUND AND POLYMER COMPOUND OBTAINED BY POLYMERIZING THE POLYMERIZABLE COMPOUND FUJIFILM CORPORATION (JP) 2009-10-01 — — US disclosed
US-20080241737-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2008-10-02 — — US disclosed
US-20080241737-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2008-10-02 — — US disclosed
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