SCHEMBL13564201

SCHEMBL13564201

CCC(C)(C)OC(=O)CC[SiH3]

nearest known ligand 0.33

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33
TSHR P16473 1/20 0.33
TDP1 Q9NUW8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13564209 0.88 TSHR (0.33) ALDH1A1TSHRTDP1
SCHEMBL142215 0.86 TSHR (0.39) ALDH1A1TSHRTDP1
SCHEMBL13564184 0.82 ALDH1A1 (0.36) ALDH1A1TSHRTDP1
SCHEMBL1998916 0.82 ALDH1A1 (0.50) ALDH1A1TSHRTDP1
SCHEMBL12083658 0.80 ALDH1A1 (0.35) ALDH1A1TSHRTDP1
SCHEMBL8011953 0.80 ALDH1A1 (0.35) ALDH1A1TSHRTDP1
SCHEMBL13564196 0.79 HDAC6 (0.37) TSHRTDP1
SCHEMBL13785296 0.78 EGLN1 (0.43) ALDH1A1TSHRTDP1
SCHEMBL18513409 0.78 TSHR (0.39) ALDH1A1TSHRTDP1
SCHEMBL5069214 0.78 ALDH1A1 (0.33) ALDH1A1TSHRTDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230305405-A1 COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-28 US disclosed
US-20230244149-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20180081272-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-22 US disclosed
US-9902875-B2 Composition for forming a coating type BPSG film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9880470-B2 Composition for forming a coating type silicon-containing film, substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-30 US disclosed
US-9627204-B2 Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-18 US disclosed
US-9624356-B2 Ultraviolet absorber, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMIAL CO., LTD (JP) 2017-04-18 US disclosed
US-9580623-B2 Patterning process using a boron phosphorus silicon glass film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-02-28 US disclosed
US-9490144-B2 Quaternary ammonium salt compound, composition for forming a resist under layer film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-08 US disclosed
US-20160276152-A1 PATTERNING PROCESS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2016-09-22 US disclosed
US-20140273448-A1 COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-18 US disclosed
US-20140205951-A1 THERMAL CROSSLINKING ACCELERATOR, POLYSILOXANE-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SAME, AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-24 US disclosed
US-20140193757-A1 COMPOSITON FOR FORMING METAL OXIDE-CONTAINING FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-10 US disclosed
US-20140193975-A1 COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-07-10 US disclosed
US-8759220-B1 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-24 US disclosed
US-20130284698-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-20130284699-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-10-31 US disclosed
US-20130210236-A1 SILICON-CONTAINING SURFACE MODIFIER, RESIST UNDERLAYER FILM COMPOSITION CONTAINING THIS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-08-15 US disclosed
US-20130005150-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-03 US disclosed
US-20120276483-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-01 US disclosed