⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17793262 | 0.88 | — | — | |
| SCHEMBL14554251 | 0.84 | — | — | |
| SCHEMBL17471379 | 0.74 | TSHR (0.50) | — | |
| SCHEMBL8101259 | 0.71 | — | — | |
| SCHEMBL10087163 | 0.71 | — | — | |
| SCHEMBL10087164 | 0.71 | — | — | |
| SCHEMBL8353755 | 0.71 | — | — | |
| SCHEMBL24654995 | 0.71 | ALDH1A1 (0.33) | — | |
| SCHEMBL31012154 | 0.69 | — | — | |
| Chloromethane SCHEMBL11103401 | 0.68 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9766547-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method of manufacturing electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-09-19 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| US-9557643-B2 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device using the same and electronic device | FUJIFILM CORPORATION (JP) | 2017-01-31 | — | — | US | disclosed |
| US-9551935-B2 | Pattern forming method and resist composition | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9527809-B2 | Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-27 | — | — | US | disclosed |
| US-9519214-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, pattern forming method, process for manufacturing electronic device and electronic device | FUJIFILM CORPORATION (JP) | 2016-12-13 | — | — | US | disclosed |
| US-9470980-B2 | Pattern-forming method, electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition, resist film, manufacturing method of electronic device using them and electronic device | FUJIFILM CORPORATION (JP) | 2016-10-18 | — | — | US | disclosed |
| US-20160291461-A1 | PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER PRODUCTION METHOD | FUJIFILM CORPORATION (JP) | 2016-10-06 | — | — | US | disclosed |
| US-9448477-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, manufacturing method of electronic device using the same, and electronic device | FUJIFILM CORPORATION (JP) | 2016-09-20 | — | — | US | disclosed |
| US-20140349224-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-8822129-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2014-09-02 | — | — | US | disclosed |
| US-20140212796-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-07-31 | — | — | US | disclosed |
| US-20140212811-A1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2014-07-31 | — | — | US | disclosed |
| US-20130084438-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130040096-A1 | PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSTIVE RESIN COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-02-14 | — | — | US | disclosed |
| US-20130017377-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20130011785-A1 | PATTERN FORMING METHOD AND RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-10 | — | — | US | disclosed |
| US-20120321855-A1 | PATTERN FORMING METHOD AND RESIST COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-12-20 | — | — | US | disclosed |
| US-20120282548-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2012-11-08 | — | — | US | disclosed |