SCHEMBL1367575

SCHEMBL1367575

O[Si](O)(O)O.[La].[Y]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL199821 0.91
SCHEMBL6045708 0.91
SCHEMBL383406 0.91
SCHEMBL137695 0.91
SCHEMBL21623666 0.91
SCHEMBL25400723 0.83
SCHEMBL1370855 0.83
Hydrochloric Acid SCHEMBL17925355 0.83
SCHEMBL1369435 0.83
SCHEMBL1369276 0.83

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119161778-A Bridge concrete cooling coating and preparation method thereof 黄河实验室(河南) 2024-12-20 CN claimed
CN-117385485-B Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-02-23 CN claimed
CN-117385485-A Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-01-12 CN claimed
JP-56143286-A None JP disclosed
JP-56143286-A None JP disclosed
CN-119161778-A Bridge concrete cooling coating and preparation method thereof 黄河实验室(河南) 2024-12-20 CN disclosed
CN-117385485-B Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-02-23 CN disclosed
CN-117385485-A Rare earth-based broad-spectrum passive cooling hollow heat-insulating fiber and preparation method and application thereof 天津包钢稀土研究院有限责任公司 2024-01-12 CN disclosed
US-8252674-B2 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-28 US disclosed
US-20110287622-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN (KR) 2011-11-24 US disclosed
US-8013402-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-06 US disclosed
US-20100025781-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN 2010-02-04 US disclosed
US-7615830-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-11-10 US disclosed
US-20060081948-A1 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-04-20 US disclosed
CN-1008110-B METHOD OF PRODUCING TERBIUM ACTIVITATED YTTRIUM SILICATE FLUORESCENT MATERIALS, ESPECIALLY GREEN LUMINOPHORES TUNGSRAM RESZVENYTARSASAG (HU) 1990-05-23 CN disclosed
CN-86104658-A Terbium activatory yttrium silicate fluorescent material is the production method of green luminophores particularly 1987-02-04 CN disclosed
JP-S56143286-A PREPARATION OF TERBIUM-ACTIVATED LANTHANUM YTTRIUM SILICATE PHOSPHOR MITSUBISHI ELECTRIC CORP 1981-11-07 JP disclosed
JP-S56143286-A PREPARATION OF TERBIUM-ACTIVATED LANTHANUM YTTRIUM SILICATE PHOSPHOR MITSUBISHI ELECTRIC CORP 1981-11-07 JP disclosed