SCHEMBL1369276

SCHEMBL1369276

O[Si](O)(O)O.[Ti].[Y]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL42404 0.91
SCHEMBL199821 0.91
SCHEMBL3486966 0.91
SCHEMBL383406 0.91
SCHEMBL21623666 0.91
Hydrochloric Acid SCHEMBL17925355 0.83
SCHEMBL914633 0.83
SCHEMBL7615290 0.83
SCHEMBL11788894 0.83
Phosphine SCHEMBL22273599 0.83

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-105018088-A Silicate-based rare-earth ion doped visible-ultraviolet up-conversion luminescent material, and preparation method and application thereof UNIV HEBEI 2015-11-04 CN claimed
CN-105018088-A Silicate-based rare-earth ion doped visible-ultraviolet up-conversion luminescent material, and preparation method and application thereof UNIV HEBEI 2015-11-04 CN disclosed
US-8252674-B2 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-28 US disclosed
US-20110287622-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN (KR) 2011-11-24 US disclosed
US-8013402-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-06 US disclosed
US-20100025781-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN 2010-02-04 US disclosed
US-7615830-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-11-10 US disclosed
US-20060081948-A1 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-04-20 US disclosed