SCHEMBL1368934

SCHEMBL1368934

O=[Si]([O-])[O-].O=[Si]([O-])[O-].O=[Si]([O-])[O-].[Sc+3].[Y+3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL199820 0.94
SCHEMBL2000627 0.94
SCHEMBL14108531 0.94
Hydrochloric Acid SCHEMBL17925354 0.88
Ammonia Solution, Strong SCHEMBL887907 0.88
Zinc Ion SCHEMBL6306322 0.88
SCHEMBL9422162 0.88
SCHEMBL1370871 0.88
SCHEMBL6335839 0.88
SCHEMBL15122505 0.88

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4514752-A1 COMPOUNDS HAVING A THORTVEITITE-RELATED STRUCTURE AND METHODS FOR MAKING AND USING OREGON STATE UNIVERSITY (US) 2025-03-05 EP disclosed
US-20250051179-A1 COMPOUNDS HAVING A THORTVEITITE-RELATED STRUCTURE AND METHODS FOR MAKING AND USING OREGON STATE UNIVERSITY (OR) 2025-02-13 US disclosed
CN-119403765-A Compounds having scandium yttrium stone related structures and methods of making and using the same 俄勒冈州立大学 2025-02-07 CN disclosed
WO-2023212284-A1 COMPOUNDS HAVING A THORTVEITITE-RELATED STRUCTURE AND METHODS FOR MAKING AND USING OREGON STATE UNIVERSITY (US) 2023-11-02 WO disclosed
US-8252674-B2 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-08-28 US disclosed
US-20110287622-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN (KR) 2011-11-24 US disclosed
US-8013402-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-06 US disclosed
US-20100025781-A1 Transistors with Multilayered Dielectric Films and Methods of Manufacturing Such Transistors LIM HA-JIN 2010-02-04 US disclosed
US-7615830-B2 Transistors with multilayered dielectric films SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-11-10 US disclosed
US-20060081948-A1 Transistors with multilayered dielectric films and methods of manufacturing such transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-04-20 US disclosed
EP-0741561-A1 POLYAMINO SALTS OF ALPHA-HYDROXYACIDS, ALPHA-KETOACIDS AND RELATED COMPOUNDS UNILEVER PLC (GB) 1996-11-13 EP disclosed
WO-1995020376-A1 POLYAMINO SALTS OF ALPHA-HYDROXYACIDS, ALPHA-KETOACIDS AND RELATED COMPOUNDS UNILEVER PLC (GB) 1995-08-03 WO disclosed